| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,043 pcs
|
1043 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
501 pcs
|
501 pcs | On Request | 1 | On Request | On Request | 1421 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMA430NZ is a single N-Channel MOSFET designed using onsemi's advanced POWERTRENCH process. It is rated for a maximum drain-source voltage of 30V and a continuous drain current of 5A at 25°C ambient. The device offers a low drain-source on-resistance of 40mΩ maximum at Vgs=4.5V and Id=5A, and 50mΩ maximum at Vgs=2.5V and Id=4.5A. This makes it suitable for low-voltage switching applications. The gate threshold voltage ranges from 0.6V to 1.5V, and the maximum gate charge is 11nC at Vgs=4.5V. The input capacitance is 800pF at Vds=10V. The device is housed in a compact 6-WDFN exposed pad package (6-MicroFET 2x2) for surface mount assembly. It is RoHS compliant and halogen-free. Typical applications include Li-ion battery pack protection and other portable power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.98 | $0.98 |
| 3,000+ | $0.24 | $0.24 |
| 6,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
It is available in a 6-WDFN Exposed Pad package (6-MicroFET 2x2).
The junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and halogen-free.
The maximum on-resistance is 50mΩ at Vgs=2.5V and Id=4.5A.
The gate threshold voltage ranges from 0.6V (min) to 1.5V (max), with a typical value of 0.81V at Id=250µA.
The HBM ESD protection level is typically 2.5kV.