FDMA420NZ Single N-Channel MOSFET featuring 20V drain-source voltage and 5.7A continuous drain current. Suitable for low-voltage switching applications.
Mfr Part #:

FDMA420NZ

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Single N-Channel MOSFET featuring 20V drain-source voltage and 5.7A continuous drain current. Suitable for low-voltage switching applications.
✓ Total Stock: 1,225 pcs

FDMA420NZ Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
647 pcs
647 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
578 pcs
578 pcs On Request 1 On Request On Request On Request On Request On Request

FDMA420NZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMA420NZ Description

Short technical summary and product information.

The FDMA420NZ is a single N-Channel MOSFET from On Semiconductor, designed for efficient power management in low-voltage circuits. It utilizes standard MOSFET (Metal Oxide) technology and delivers up to 5.7A of continuous drain current with a maximum drain-to-source voltage of 20V.

 

The device features a low on-resistance of 30mOhm at 5.7A and 4.5V gate drive, reducing conduction losses. Gate threshold voltage is 1.5V maximum at 250µA, enabling logic-level drive compatibility. With input capacitance of 935pF at 10V and gate charge of 12nC at 4.5V, the FDMA420NZ is optimized for moderate-speed switching applications.

 

Packaged in a compact 6-WDFN with exposed pad (6-MicroFET 2x2mm), the device supports surface mount assembly and efficient heat transfer. Maximum power dissipation is 2.4W at ambient temperature, and it operates over a junction temperature range of -55°C to 150°C.

FDMA420NZ Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: FDMA420NZ N-Channel MOSFET
Subcategory: Single MOSFET

FDMA420NZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMA420NZ Features

  • N-Channel MOSFET with 20V drain-source rating.
  • Maximum drain current of 5.7A at ambient temperature.
  • Low on-resistance of 30mOhm at 5.7A and 4.5V.
  • Surface mount 6-WDFN exposed pad package.
  • Operating temperature range -55°C to 150°C.

FDMA420NZ Applications

  • Load switching in low-voltage power systems.
  • DC-DC converter and power management circuits.
  • Battery protection and management modules.
  • Portable electronics and handheld devices.

FDMA420NZ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDMA420NZ?

The maximum drain-to-source voltage (Vdss) is 20 V.

What is the maximum drain current rating?

The maximum drain current is 5.7A at ambient temperature (Ta).

What package does the FDMA420NZ come in?

The device is supplied in a 6-WDFN exposed pad surface-mount package, also known as 6-MicroFET (2x2mm).

What is the operating temperature range?

The junction temperature operating range is -55°C to 150°C.

What is the typical gate threshold voltage?

The maximum gate threshold voltage is 1.5 V at Id = 250 µA.

What is the maximum on-resistance?

The maximum on-resistance (Rds on) is 30 mOhm at Vgs = 4.5V and Id = 5.7A.

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