| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
369,517 pcs
|
369517 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
40,020 pcs
|
40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,597 pcs
|
2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMA410NZ is a single N-Channel MOSFET designed using On Semiconductor's advanced POWERTRENCH process. It is rated for a drain-source voltage of 20V and a continuous drain current of 9.5A at 25°C ambient. The device offers a maximum on-resistance of 23mOhm at VGS=4.5V and ID=9.5A, with specified Rds(on) values down to 1.5V gate drive for low-voltage switching applications.
The MOSFET is housed in a compact 6-WDFN exposed pad package (MicroFET 2x2mm) with a low profile of 0.8mm maximum, making it suitable for space-constrained designs. It includes HBM ESD protection greater than 2.5kV and is free from halogenated compounds and antimony oxides. The device is Pb-Free, Halide Free, and RoHS compliant.
Typical applications include Li-Ion battery packs, baseband switching, load switching, and DC-DC conversion circuits. The FDMA410NZ is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.79 | $1.79 |
| 10+ | $1.20 | $1.20 |
| 100+ | $0.79 | $0.79 |
| 500+ | $0.56 | $0.56 |
| 1,000+ | $0.50 | $0.50 |
| 3,000+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 20V.
The continuous drain current is 9.5A at TA=25°C.
The maximum on-resistance is 23mOhm at VGS=4.5V and ID=9.5A.
The operating junction temperature range is -55°C to +150°C.
Yes, the device is RoHS3 compliant and Pb-Free per the datasheet.
It is available in a 6-WDFN exposed pad package (MicroFET 2x2mm).
The gate threshold voltage is 0.4V minimum and 1V maximum at ID=250µA.