| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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920 pcs
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920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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717 pcs
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717 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMA3028N is a dual N-channel MOSFET from On Semiconductor designed for surface mount applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 3.8A. The device has a low on-resistance of 68mΩ maximum at 4.5V gate drive, which helps reduce conduction losses. The gate charge is 5.2nC, and the input capacitance is 375pF, enabling efficient switching. The logic level gate threshold voltage of 1.5V ensures compatibility with low-voltage control signals. The MOSFET is housed in a 6-VDFN exposed pad package, also known as 6-MicroFET (2x2), which provides excellent thermal performance. The maximum power dissipation is 700mW, and the operating junction temperature range is -55°C to 150°C. This device is suitable for power management and load switching in portable electronics and other low-voltage systems.
The maximum drain-source voltage is 30V.
The maximum continuous drain current is 3.8A.
The maximum on-resistance is 68mΩ at 4.5V gate-source voltage and 3.8A drain current.
The operating junction temperature range is -55°C to 150°C.
It is available in a 6-VDFN Exposed Pad package, also known as 6-MicroFET (2x2).
It is listed as RoHS3 compliant, but this is unverified.
The maximum gate threshold voltage is 1.5V at 250µA drain current.