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FDMA3027PZ Dual P-Channel PowerTrench MOSFET from onsemi, -30V drain-source voltage, -3.3A continuous drain current, 87mohm max on-resistance at -10V.
Mfr Part #:

FDMA3027PZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual P-Channel PowerTrench MOSFET from onsemi, -30V drain-source voltage, -3.3A continuous drain current, 87mohm max on-resistance at -10V.
✓ Total Stock: 9,281 pcs

FDMA3027PZ Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
9,281 pcs
On Request
9281 pcs On Request 1 6 On Request 19+ On Request On Request
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FDMA3027PZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDMA3027PZ Description

Short technical summary and product information.

The FDMA3027PZ is a dual P-Channel PowerTrench MOSFET from onsemi designed for compact switching applications. Each MOSFET features a maximum drain-to-source voltage of -30V and continuous drain current of -3.3A. On-resistance is a maximum 87 milliohms at Vgs = -10V and 152 milliohms at Vgs = -4.5V, enabling efficient low-voltage switching. The device includes logic-level gate drive, up to ±25V gate-source voltage rating, and HBM ESD protection above 2kV typical. Gate charge is 10nC maximum at -10V, and input capacitance is 435pF at Vds = -15V. It operates over -55C to +150C junction temperature range. The 6-VDFN exposed pad package (6-MicroFET 2x2mm) supports surface mount assembly with a maximum height of 0.8mm. Power dissipation is 1.4W (single operation, note 1a) and thermal resistance from junction to ambient ranges from 69 to 173 C/W depending on mounting conditions. These devices are Pb-Free and RoHS compliant per the datasheet.

FDMA3027PZ Quick Information

Product Type: MOSFET Array
Series: POWERTRENCH
Canonical Name: FDMA3027PZ Dual P-Channel PowerTrench MOSFET
Subcategory: Dual P-Channel

FDMA3027PZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDMA3027PZ Features

  • Dual P-Channel MOSFET in one package.
  • Maximum drain-source voltage -30V.
  • Continuous drain current -3.3A.
  • Low on-resistance 87mohm at -10V.
  • HBM ESD protection >2kV typical.

FDMA3027PZ Applications

  • Ideal for dual load switch designs.
  • Discrete gate driver for larger MOSFETs.
  • Use in battery management circuits.
  • Low voltage power distribution.

FDMA3027PZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain to source voltage of the FDMA3027PZ?

The maximum drain to source voltage (Vdss) is -30 V.

What is the continuous drain current rating?

The continuous drain current is -3.3 A maximum.

What is the package type for this MOSFET?

The package is 6-VDFN Exposed Pad (6-MicroFET 2x2).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDMA3027PZ RoHS compliant?

Yes, the datasheet states the device is Pb-Free and RoHS Compliant.

What is the maximum on-resistance at Vgs = -10V?

The maximum on-resistance is 87 milliohms at Id = -3.3 A, Vgs = -10 V.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is -3 V at Id = -250 µA.

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