| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,964 pcs
|
45964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
34,020 pcs
|
34020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,333 pcs
|
3333 pcs | On Request | 1 | On Request | On Request | 1743+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id |
The FDMA3023PZ is a dual P-channel MOSFET from onsemi, designed as a single-package solution for battery charge switching in cellular handsets and other ultra-portable applications. It integrates two independent P-channel MOSFETs with low on-state resistance to minimize conduction losses, and when connected in a common-source configuration, it enables bidirectional current flow.
Key electrical specifications include a drain-to-source voltage rating of -30V, a continuous drain current of -2.9A, and a pulsed drain current of -6A. The device offers a maximum on-state resistance of 90mOhm at VGS=-4.5V, 130mOhm at -2.5V, 170mOhm at -1.8V, and 240mOhm at -1.5V, supporting logic-level gate drive. It also features a maximum gate charge of 11nC and input capacitance of 530pF, contributing to efficient switching performance.
The FDMA3023PZ is housed in a 6-VDFN exposed pad package (MicroFET 2x2mm) with a lead pitch of 0.65mm, offering exceptional thermal performance for its size. It is rated for operation over a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 1.4W (single operation) and thermal resistance as low as 69°C/W (dual operation). The device includes ESD protection of 2kV (HBM) and is halogen-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.36 | $1.36 |
| 10+ | $0.86 | $0.86 |
| 100+ | $0.57 | $0.57 |
| 500+ | $0.44 | $0.44 |
| 3,000+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) is -30V.
The continuous drain current (ID) is -2.9A.
The maximum on-state resistance (RDS(on)) is 90mΩ at VGS=-4.5V and ID=-2.9A.
The operating junction temperature range is -55°C to +150°C.
Yes, the FDMA3023PZ is RoHS compliant and halogen-free.
The FDMA3023PZ is available in a 6-VDFN exposed pad package (MicroFET 2x2mm).