| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | 916 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMA291P is a single P-Channel MOSFET designed for battery charge and load switching in cellular handsets and other ultraportable applications. It features a low on-state resistance of 42 mΩ at VGS = -4.5 V, 58 mΩ at -2.5 V, and 98 mΩ at -1.8 V, enabling efficient power management. The device is rated for a maximum drain-source voltage of -20 V and continuous drain current of -6.6 A (pulsed up to -24 A).
Gate charge is 14 nC at 4.5 V, and input capacitance is 1000 pF at VDS = 10 V, supporting moderate switching speeds. The gate threshold voltage ranges from -0.4 V to -1.0 V, allowing logic-level drive. The device is housed in a compact 6-WDFN exposed pad package (MicroFET 2x2 mm) with a low profile of 0.8 mm maximum.
Thermal performance is characterized by junction-to-case resistance of 13 °C/W and junction-to-ambient resistance of 52 °C/W (Note 1a) or 145 °C/W (Note 1b). The operating junction temperature range is -55°C to +150°C. The FDMA291P is RoHS compliant, Pb-Free, and free from halogenated compounds and antimony oxides.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.91 | $0.91 |
| 10+ | $0.57 | $0.57 |
| 100+ | $0.37 | $0.37 |
| 500+ | $0.28 | $0.28 |
| 1,000+ | $0.25 | $0.25 |
| 3,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -20 V.
The continuous drain current is -6.6 A at Ta.
The operating junction temperature range is -55°C to +150°C.
It is available in a 6-WDFN Exposed Pad package (MicroFET 2x2 mm).
Yes, it is RoHS compliant and Pb-Free.
The maximum on-resistance is 98 mΩ at VGS = -1.8 V.
The gate threshold voltage ranges from -0.4 V (minimum) to -1.0 V (maximum) at ID = -250 µA.