| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,555 pcs
|
5555 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
2,558 pcs
|
2558 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,468 pcs
|
1468 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
515 pcs
|
515 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMA1032CZ is a complementary N/P-channel MOSFET array designed for DC-DC converter switching in portable and ultra-portable applications. It integrates an N-channel and a P-channel MOSFET in a single 6-MicroFET (2x2mm) package.
The N-channel MOSFET has a maximum drain-source voltage of 20V and continuous drain current of 3.7A, with on-resistance of 68mΩ at 4.5V gate drive and 86mΩ at 2.5V. The P-channel MOSFET has a maximum drain-source voltage of -20V and continuous drain current of -3.1A, with on-resistance of 95mΩ at -4.5V and 141mΩ at -2.5V. Both channels feature logic-level gate drive with a maximum gate-source voltage of ±12V.
This device offers low gate charge (6nC at 4.5V) enabling high-frequency switching directly from logic controllers. It includes HBM ESD protection above 2kV. The MicroFET package provides excellent thermal performance with junction-to-ambient thermal resistance as low as 69°C/W (dual operation).
The FDMA1032CZ is surface mount, RoHS compliant, Pb-free, and halogen free, suitable for power management in cellular handsets, tablets, and other battery-powered devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.08 | $1.08 |
| 10+ | $0.67 | $0.67 |
| 100+ | $0.44 | $0.44 |
| 500+ | $0.34 | $0.34 |
| 1,000+ | $0.30 | $0.30 |
| 3,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel drain-source voltage is 20V maximum, and the P-channel drain-source voltage is -20V maximum.
It is available in a 6-VDFN exposed pad package, also known as 6-MicroFET (2x2 mm).
The operating junction temperature range is from -55°C to +150°C.
Yes, the datasheet states it is Pb-Free, Halide Free, and RoHS Compliant.
The typical maximum on-resistance is 68 mΩ at Vgs=4.5V and Id=3.7A.
It has HBM ESD protection greater than 2 kV.
The maximum gate-source voltage is ±12V for both N-channel and P-channel.