| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
78,000 pcs
|
78000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,980 pcs
|
2980 pcs | On Request | 1 | On Request | On Request | 1052 | On Request | On Request | |
|
914 pcs
|
914 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMA1029PZ from onsemi is a dual P-Channel PowerTrench MOSFET designed for battery charge switching in cellular handsets and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimal conduction losses. When connected in a common source configuration, bi-directional current flow is possible.
Key electrical ratings include a maximum drain-source voltage of -20V, continuous drain current of -3.1A, and pulsed drain current of -6A. The device offers low on-resistance: 95mΩ maximum at VGS=-4.5V and 141mΩ maximum at VGS=-2.5V. Gate threshold voltage is 1.5V maximum at ID=250µA. The device also provides HBM ESD protection greater than 2.5kV.
The FDMA1029PZ is housed in a WDFN-6 2x2 MicroFET package with a low profile of 0.8mm maximum, suitable for space-constrained designs. It is Pb-Free, Halide Free, and RoHS Compliant. The device operates over a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.05 | $1.05 |
| 10+ | $0.65 | $0.65 |
| 100+ | $0.43 | $0.43 |
| 500+ | $0.33 | $0.33 |
| 1,000+ | $0.29 | $0.29 |
| 3,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20V.
The continuous drain current (Id) is -3.1A.
The maximum drain-source on-resistance (RDS(on)) is 95mΩ at VGS = -4.5V and ID = -3.1A.
The device is housed in a WDFN-6 2x2 MicroFET package.
Yes, the device is Pb-Free, Halide Free, and RoHS Compliant.
The operating junction temperature range is -55°C to +150°C.
Yes, it provides HBM ESD protection greater than 2.5kV.