| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,000 pcs
|
45000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMA1028NZ-F021 is a dual N-Channel MOSFET array from On Semiconductor, designed for compact power management in portable electronics. Each MOSFET is rated for a drain-source voltage of 20V and continuous drain current of 3.7A, with pulsed current capability up to 6A. The device features logic-level gate drive with a maximum gate threshold voltage of 1.5V, enabling direct interface with low-voltage control signals.
On-resistance is specified at 68mOhm maximum at Vgs=4.5V and 86mOhm at Vgs=2.5V, ensuring low conduction losses. The device includes built-in ESD protection exceeding 2kV (HBM). Power dissipation depends on operating conditions: 1.4W for single operation under Note 1a, and 0.7W under Note 1b. Thermal resistance ranges from 86°C/W (single, Note 1a) to 151°C/W (dual operation, Note 1d).
The MOSFET is housed in a 6-VDFN exposed pad package (MicroFET 2x2mm) with a low profile of 0.8mm maximum, suitable for space-constrained designs. It is surface-mountable and supplied in tape and reel packaging (3000 pieces per reel). The device is RoHS compliant, Pb-Free, and free from halogenated compounds and antimony oxides.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is rated at 20V.
The continuous drain current is 3.7A.
The maximum on-resistance (Rds(on)) is 68 mOhm at Vgs=4.5V and Id=3.7A.
It is available in a 6-VDFN Exposed Pad package (MicroFET 2x2mm) for surface mount.
The operating junction temperature range is -55°C to +150°C.
Yes, the device is RoHS compliant, Pb-Free, and free from halogenated compounds.
The device has HBM ESD protection exceeding 2 kV.