FDMA1028NZ FDMA1028NZ is a dual N-Channel MOSFET from ON Semiconductor, rated for 20V VDS and 3.7A continuous drain current. It offers low on-resistance of 68mΩ at 4.5V and is housed in a 6-MicroFET package.
Mfr Part #:

FDMA1028NZ

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMA1028NZ is a dual N-Channel MOSFET from ON Semiconductor, rated for 20V VDS and 3.7A continuous drain current. It offers low on-resistance of 68mΩ at 4.5V and is housed in a 6-MicroFET package.
✓ Total Stock: 16,000 pcs
$ Price Range: $0.23 - $1.27

FDMA1028NZ Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDMA1028NZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDMA1028NZ Description

Short technical summary and product information.

The FDMA1028NZ is a dual N-Channel MOSFET from ON Semiconductor, designed for compact switching applications in cellular handsets and other ultra-portable devices. Each MOSFET is rated for a maximum drain-source voltage of 20V and a continuous drain current of 3.7A, with pulsed current capability up to 6A. The device features logic level gate drive, with a maximum gate threshold voltage of 1.5V at 250µA, allowing direct drive from low-voltage logic.

 

On-resistance is specified at 68mΩ maximum at VGS=4.5V and 86mΩ maximum at VGS=2.5V, minimizing conduction losses. Input capacitance is 340pF at VDS=10V, and total gate charge is 6nC at VGS=4.5V, enabling efficient switching. The device includes HBM ESD protection above 2kV.

 

The FDMA1028NZ is housed in a 6-VDFN Exposed Pad package (MicroFET 2x2mm), which provides excellent thermal performance for its size. The package is surface mount and supports tape and reel packaging with 3000 units per reel. The device is RoHS compliant, halogen free, and lead free, with an operating junction temperature range of -55°C to 150°C.

FDMA1028NZ Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: Dual N-Channel MOSFET, 20V, 3.7A, 68mΩ, MicroFET 2x2
Subcategory: N-Channel Dual MOSFET

FDMA1028NZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

FDMA1028NZ Estimated Pricing

Qty Low High
1+ $1.27 $1.27
10+ $0.77 $0.77
100+ $0.50 $0.50
500+ $0.35 $0.35
1,000+ $0.30 $0.30
3,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMA1028NZ Features

  • Dual N-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current rating of 3.7A.
  • Low on-resistance of 68mΩ at 4.5V gate drive.
  • Logic level gate drive compatible (VGS(th) ≤ 1.5V).
  • Compact 6-MicroFET (2x2mm) surface mount package.

FDMA1028NZ Applications

  • Ideal for dual switching in cellular handsets.
  • Suitable for ultra-portable battery-powered devices.
  • Used in power management and load switching circuits.
  • Well-suited for linear mode operation due to thermal performance.

FDMA1028NZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type for the FDMA1028NZ?

The FDMA1028NZ is available in a 6-VDFN Exposed Pad package, also known as 6-MicroFET (2x2mm).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDMA1028NZ RoHS compliant?

Yes, the device is RoHS compliant and halogen free as per the datasheet.

What is the maximum drain-source voltage?

20V.

What is the continuous drain current?

3.7A.

What is the on-resistance at 4.5V?

68mΩ maximum at VGS=4.5V, ID=3.7A.

What ESD protection level does it have?

HBM ESD protection level greater than 2kV.

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