FDMA1027P

The FDMA1027P is a dual P-Channel MOSFET designed for battery charge switch applications in portable devices. It is manufactured by On Semiconductor using PowerTrench technology, offering low on-state resistance for minimal conduction losses. The device contains two independent P-Channel MOSFETs in a single package, enabling bidirectional current flow in common source configurations.

Each MOSFET has a maximum drain-source voltage of -20 V (absolute ratings) and continuous drain current of -3.0 A (pulsed up to -6 A). The device features a logic level gate with a maximum gate threshold voltage of 1.3 V at 250 µA drain current. On-resistance is specified at multiple gate voltages: 120 mOhm at Vgs = -4.5 V, 160 mOhm at Vgs = -2.5 V, and 240 mOhm at Vgs = -1.8 V. Maximum gate charge is 6 nC at 4.5 V. Input capacitance is 435 pF at 10V drain-source voltage.

The FDMA1027P is housed in a 6-VDFN exposed pad package, also known as MicroFET 2x2 (case 511DA). It is surface mountable and supplied in tape and reel packaging (3000 pcs per reel). The device offers several thermal resistance ratings depending on operation mode: single operation junction-to-ambient thermal resistance is 86 °C/W (Note 1a) or 173 °C/W (Note 1b), while dual operation gives 69 °C/W (Note 1c) or 151 °C/W (Note 1d). Maximum power dissipation varies accordingly, up to 1.8 W for dual operation (Note 1c). Operating temperature range is -55°C to 150°C.

The FDMA1027P is RoHS3 compliant, Pb-Free, and Halogen Free. It is designed for battery charge switch circuits in cellular handsets and other ultra-portable applications. The low-profile 0.8 mm maximum height package is well-suited for space-constrained designs.