| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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882 pcs
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882 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Tape & Reel |
The FDM6296 is a single N-Channel MOSFET from NA, utilizing PowerTrench technology for efficient switching performance. It is designed for applications such as Point of Load converters and 1/16 Brick Synchronous Rectifiers.
Key electrical characteristics include a drain-source breakdown voltage of 30V and a continuous drain current of 11.5A. The device offers a low Rds(on) of 10.5 mΩ at Vgs = 10V and 15 mΩ at Vgs = 4.5V, optimizing the balance between on-resistance and gate charge for efficient operation.
Packaged in a low-profile MicroFET 3.3 x 3.3 mm package, the FDM6296 is suitable for space-constrained designs. Its thermal characteristics include a junction-to-ambient thermal resistance of 52 °C/W when mounted on a 1 in² copper pad.
This MOSFET is designed to perform well in demanding power conversion applications, serving effectively as a high-side control switch or a low-side synchronous rectifier.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V minimum at Vgs=0V, Id=250µA.
The continuous drain current is 11.5A.
The typical on-resistance is 10.5mΩ at Vgs=10V, Id=11.5A, and 15mΩ at Vgs=4.5V, Id=10A.
The device is available in a MicroFET surface-mount package.
The operating junction temperature range is -55°C to +150°C.
The typical gate threshold voltage is 1.9V at Vds=Vgs, Id=250µA.
The steady state power dissipation is 2.5W (Note 1a) and 1.2W (Note 1b).