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FDM3622 N-Channel MOSFET, 100V drain-source voltage, 4.4A continuous drain current, 60mΩ on-resistance at 10V gate drive, surface mount in 8-PowerWDFN (8-MLP) package.
Mfr Part #:

FDM3622

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 100V drain-source voltage, 4.4A continuous drain current, 60mΩ on-resistance at 10V gate drive, surface mount in 8-PowerWDFN (8-MLP) package.
✓ Total Stock: 21,200 pcs
$ Price Range: $0.72 - $2.45

FDM3622 Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDM3622 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDM3622 Description

Short technical summary and product information.

The FDM3622 is an N-Channel MOSFET from On Semiconductor, manufactured using the advanced POWERTRENCH process. It features a maximum drain-source voltage of 100V and a continuous drain current of 4.4A at 25°C. The device offers a low on-resistance of 60mΩ maximum at VGS=10V and ID=4.4A, with a typical value of 44mΩ. Gate threshold voltage ranges from 2V to 4V, and the maximum gate-source voltage is ±20V.

 

This MOSFET is designed for efficient switching with low gate charge (17nC maximum at VGS=10V) and low Miller charge. Input capacitance is 820pF typical, and output capacitance is 125pF typical. The device can handle pulsed drain currents up to 20A and single pulse avalanche energy up to 54mJ. Power dissipation is 2.1W at 25°C ambient, with a junction-to-case thermal resistance of 3.0°C/W and junction-to-ambient of 60°C/W.

 

The FDM3622 is housed in a surface mount 8-PowerWDFN package (8-MLP 3.3x3.3mm) and is RoHS3 compliant, Pb-Free, and Halide Free. It operates over a junction temperature range of -55°C to 150°C.

FDM3622 Quick Information

Product Type: N-Channel MOSFET
Series: PowerTrench
Canonical Name: FDM3622 N-Channel MOSFET, 100V, 4.4A, 60mΩ, Surface Mount, 8-PowerWDFN
Subcategory: N-Channel MOSFET

FDM3622 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDM3622 Estimated Pricing

Qty Low High
1+ $2.45 $2.45
10+ $1.57 $1.57
100+ $1.07 $1.07
500+ $0.85 $0.85
1,000+ $0.78 $0.78
3,000+ $0.72 $0.72

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDM3622 Features

  • N-Channel MOSFET with 100V drain-source rating.
  • Low on-resistance of 60mΩ at 10V gate drive.
  • Continuous drain current of 4.4A at 25°C.
  • Surface mount 8-MLP (3.3x3.3mm) package.
  • RoHS compliant and Pb-Free.

FDM3622 Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management applications.
  • Ideal for high-frequency switching.
  • Applicable in load switch designs.

FDM3622 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDM3622?

100V maximum.

What package does the FDM3622 come in?

8-PowerWDFN (8-MLP 3.3x3.3mm) surface mount package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the FDM3622 RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free and Halide Free.

What is the gate threshold voltage range?

2V to 4V.

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