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FDJ1027P Dual P-Channel PowerTrench MOSFET rated at -20V and -2.8A continuous drain current. Features low on-resistance down to 160mΩ and logic level gate drive.
Mfr Part #:

FDJ1027P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual P-Channel PowerTrench MOSFET rated at -20V and -2.8A continuous drain current. Features low on-resistance down to 160mΩ and logic level gate drive.
Total Stock: 6,000 pcs

FDJ1027P Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

FDJ1027P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Current, Pulsed
Drain to Source Voltage (Vdss)
Drain-Source Breakdown Voltage
FET Feature
Forward Transconductance
Gate Charge (Qg) (Max) @ Vgs
Gate Threshold Voltage
Gate-Source Voltage (Vgss)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Output Capacitance
Power
Rds On (Max) @ Id, Vgs
Standard Package Quantity
Supplier Device Package
Tape & Reel
Tape Width
Technology
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Vgs(th) (Max) @ Id
drain_source_on_resistance (Typical/Maximum @ VGS=-1.8 V, ID=-1.7 A)
drain_source_on_resistance (Typical/Maximum @ VGS=-2.5 V, ID=-2.2 A)
drain_source_on_resistance (Typical/Maximum @ VGS=-4.5 V, ID=-2.8 A)
power-dissipation (Maximum @ Note 1 b)
power_dissipation (Maximum @ Note 1 A)
reel_diameter

FDJ1027P Description

Short technical summary and product information.

The FDJ1027P is a dual P-Channel PowerTrench MOSFET from ON Semiconductor, designed for low-voltage power management applications. It features a maximum drain-source voltage of -20V and continuous drain current of -2.8A at 25°C ambient. The device offers low on-resistance: 160mΩ typical at VGS=-4.5V, 230mΩ at VGS=-2.5V, and 390mΩ at VGS=-1.8V, enabling efficient operation at logic-level gate voltages down to 1.8V.

 

This MOSFET is built using Fairchild's advanced PowerTrench process, which provides low gate charge and high power handling capability. It is housed in the compact SC-75-6 FLMP surface-mount package, which offers enhanced thermal performance with a junction-to-ambient thermal resistance of 80°C/W. The device is suitable for battery management, charger circuits, and load switch applications in portable electronics.

 

The FDJ1027P is supplied in tape and reel packaging with 3000 units per reel, making it suitable for automated assembly. Operating junction temperature range is -55°C to 150°C.

FDJ1027P Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: FDJ1027P Dual P-Channel PowerTrench MOSFET
Subcategory: P-Channel MOSFET Array

FDJ1027P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDJ1027P Features

  • Dual P-Channel MOSFET in SC-75-6 FLMP package.
  • Rated for -20V drain-source voltage.
  • Continuous drain current of -2.8A.
  • Low on-resistance of 160mΩ at -4.5V.
  • Logic level gate drive down to 1.8V.

FDJ1027P Applications

  • Ideal for battery management and charger circuits.
  • Used in load switch applications.
  • Suitable for power management in portable devices.

FDJ1027P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage is -20V.

What is the continuous drain current?

The continuous drain current is -2.8A at TA=25°C.

What is the on-resistance?

The on-resistance is 160mΩ typical at VGS=-4.5V and ID=-2.8A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FDJ1027P available in?

It is available in the SC-75-6 FLMP surface mount package.

Is the FDJ1027P RoHS compliant?

It is claimed to be RoHS3 compliant, but this is unverified.

What is the gate threshold voltage?

The gate threshold voltage ranges from -0.4V (min) to -1.5V (max), with typical -0.8V at VDS=VGS, ID=-250μA.

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