| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
966 pcs
|
966 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDI150N10 is an N-Channel MOSFET manufactured by On Semiconductor using advanced POWERTRENCH technology. It is designed for applications requiring high efficiency and fast switching performance.
The device is rated for a maximum drain-to-source voltage of 100V and a continuous drain current of 57A at 25°C case temperature. The on-state resistance is typically 12mOhm (max 16mOhm) at Vgs=10V and Id=49A, making it suitable for low conduction loss designs. Gate charge is typically 69nC at Vgs=10V.
The FDI150N10 is available in a through-hole I2PAK (TO-262) package, offering robust thermal performance with a junction-to-case thermal resistance of 1.13°C/W. It is rated for an operating junction temperature range of -55°C to +150°C. The device is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.92 | $3.92 |
| 10+ | $2.32 | $2.32 |
| 100+ | $1.97 | $1.97 |
| 500+ | $1.61 | $1.61 |
| 1,000+ | $1.45 | $1.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
57A at Tc=25°C, 40A at Tc=100°C.
Maximum 16mOhm at Vgs=10V, Id=49A; typical 12mOhm.
Through-hole I2PAK (TO-262) package.
-55°C to +150°C.
Yes, the datasheet states RoHS compliant.