| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDI045N10A-F102 is an N-Channel power MOSFET manufactured by onsemi using the advanced POWERTRENCH process, designed to minimize on-state resistance while maintaining superior switching performance. This device is rated for a drain-to-source voltage of 100V and a continuous drain current of 120A at 25°C (package-limited), with a maximum on-resistance of 4.5mOhm at 100A and 10V gate drive.
Key electrical characteristics include a maximum gate charge of 74nC at 10V, input capacitance of 5270pF at 50V, and a gate threshold voltage of 4V maximum. The device can dissipate up to 263W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. The maximum gate-source voltage is ±20V.
This MOSFET is suitable for high-power switching applications including synchronous rectification in ATX, server, and telecom power supplies, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters. The through-hole I2PAK (TO-262) package with long leads provides robust thermal and mechanical performance for demanding applications.
The device is Pb-Free and RoHS compliant, making it suitable for use in environmentally conscious designs. The low gate charge and fast switching speed enable efficient high-frequency operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.50 | $5.50 |
| 10+ | $2.89 | $2.89 |
| 100+ | $2.88 | $2.88 |
| 500+ | $2.62 | $2.62 |
| 1,000+ | $2.41 | $2.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) is 100V.
The continuous drain current is 120A at TC=25°C (package-limited). The silicon-limited rating is 164A.
The maximum on-resistance is 4.5mOhm at ID=100A and VGS=10V.
The operating junction temperature range is -55°C to 175°C.
The device is available in the I2PAK (TO-262) through-hole package with long leads.
Yes, the device is Pb-Free and RoHS compliant according to the datasheet.
The maximum power dissipation is 263W at TC=25°C.