FDI038AN06A0 N-Channel Power MOSFET from On Semiconductor, rated for 60V drain-source voltage and 80A continuous drain current. Features low on-resistance of 3.8mΩ and comes in a through-hole I2PAK (TO-262) package.
Mfr Part #:

FDI038AN06A0

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from On Semiconductor, rated for 60V drain-source voltage and 80A continuous drain current. Features low on-resistance of 3.8mΩ and comes in a through-hole I2PAK (TO-262) package.
✓ Total Stock: 14,200 pcs
$ Price Range: $1.99

FDI038AN06A0 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,800 pcs
11800 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
2,400 pcs
2400 pcs On Request 1 On Request On Request On Request On Request On Request

FDI038AN06A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDI038AN06A0 Description

Short technical summary and product information.

The FDI038AN06A0 is an N-Channel power MOSFET manufactured by On Semiconductor, designed for high-efficiency power management applications. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of 80A at case temperature (Tc=25°C), with a maximum power dissipation of 310W. The device utilizes MOSFET (Metal Oxide) technology and offers a low on-resistance of 3.8mΩ (max) at 10V gate drive, minimizing conduction losses.

 

This MOSFET is suitable for switching applications such as DC-DC converters, motor control, and power supply circuits. The gate charge is 124nC (max) at 10V, and input capacitance is 6400pF at 25V. The device operates over a junction temperature range of -55°C to 175°C.

 

The FDI038AN06A0 is packaged in a through-hole I2PAK (TO-262) package, also known as TO-262-3 Long Leads or I²Pak. The mounting type is through-hole, making it suitable for PCB designs requiring robust thermal and mechanical performance. The threshold voltage is 4V (max) at 250µA drain current, and the maximum gate-source voltage is ±20V.

FDI038AN06A0 Quick Information

Product Type: Single N-Channel Power MOSFET
Canonical Name: N-Channel MOSFET, 60V, 80A, I2PAK (TO-262)
Subcategory: N-Channel MOSFET

FDI038AN06A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDI038AN06A0 Estimated Pricing

Qty Low High
800+ $1.99 $1.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDI038AN06A0 Features

  • N-Channel MOSFET rated for 60V drain-source voltage.
  • Continuous drain current up to 80A at 25°C case.
  • Low on-resistance of 3.8mΩ at 10V gate drive.
  • Through-hole I2PAK (TO-262) mounting package.
  • Maximum junction temperature of 175°C.

FDI038AN06A0 Applications

  • Used in DC-DC converter power stages.
  • Ideal for motor control and drive circuits.
  • Suitable for high-current power supply designs.
  • Effective in load switching applications.

FDI038AN06A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the voltage rating of the FDI038AN06A0?

The drain-source voltage (Vdss) is 60V.

What package does the FDI038AN06A0 come in?

It is available in a through-hole I2PAK (TO-262) package, also known as TO-262-3 Long Leads.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the FDI038AN06A0 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the continuous drain current rating?

The continuous drain current is 80A at case temperature 25°C (Tc) and 17A at ambient temperature 25°C (Ta).

What is the on-resistance (Rds(on))?

The maximum on-resistance is 3.8mΩ at 80A drain current and 10V gate-source voltage.

What is the gate charge?

The maximum total gate charge is 124nC at 10V gate-source voltage.

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