| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDI030N06 is an N-Channel power MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 120A at 25°C case temperature. The device offers a low maximum on-resistance of 3.2mΩ at 75A and 10V gate drive, minimizing conduction losses. With a maximum gate charge of 151nC at 10V and input capacitance of 9815pF at 25V, it is suitable for moderate-speed switching. The MOSFET is housed in a through-hole I2PAK (TO-262) package, providing robust thermal performance with a maximum power dissipation of 231W at 25°C case temperature. It operates over a junction temperature range of -55°C to 175°C. The device is RoHS3 compliant and REACH unaffected, though these compliance claims are unverified. Typical applications include power supplies, motor drives, and DC-DC converters requiring high current handling and low resistance.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $2.47 | $2.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
I2PAK (TO-262) through-hole package.
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
120A at Tc=25°C.
3.2mΩ at Id=75A, Vgs=10V.