| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
254 pcs
|
254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDH50N50-F133 is an N-Channel power MOSFET from On Semiconductor, featuring a maximum drain-source voltage of 500V and continuous drain current of 48A at case temperature. It offers a low on-resistance of 105mOhm maximum at 10V gate drive and 24A, making it suitable for high-efficiency power switching applications.
With a gate charge of 137nC and input capacitance of 6460pF, the device is designed for moderate switching speeds. The maximum power dissipation is 625W, and the operating junction temperature range is -55°C to 150°C. The device uses standard MOSFET (Metal Oxide) technology.
The MOSFET is housed in a TO-247-3 through-hole package, providing robust thermal performance and easy mounting on PCBs. The recommended gate drive voltage is 10V, and the maximum gate-source voltage is ±20V. The gate threshold voltage is 5V maximum at 250µA.
| Qty | Low | High |
|---|---|---|
| 450+ | $4.60 | $4.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V
TO-247-3
-55°C to 150°C (junction temperature)
RoHS3 Compliant (unverified status)
48A at case temperature
105mOhm maximum at 10V gate drive and 24A
137nC at 10V gate voltage