| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The FDH210N08 is a N-Channel MOSFET from On Semiconductor's UniFET family. It features a maximum drain-source voltage of 75V and continuous drain current of 210A at 25°C case temperature, with a pulsed drain current capability of up to 840A. The device has a typical on-resistance of 4.65 mΩ at 10V gate drive. It is designed for switching power converter applications such as power factor correction, ATX power supplies, and electronic ballasts. The MOSFET is housed in a TO-247-3 through-hole package for efficient heat dissipation. It is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.10 | $7.10 |
| 30+ | $4.08 | $4.08 |
| 120+ | $3.60 | $3.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V.
210A at Tc=25°C, 132A at Tc=100°C.
4.65 mΩ typical, 5.5 mΩ maximum at VGS=10V, ID=125A.
-55°C to 175°C (junction temperature).
TO-247-3 through-hole package.
Yes, it is RoHS3 compliant and Pb-Free.
232 nC typical.