| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,881 pcs
|
2881 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDH047AN08A0 is an N-Channel PowerTrench MOSFET from On Semiconductor, designed for high-efficiency power conversion. It features a drain-source voltage rating of 75V and a continuous drain current of 80A (at Tc < 144°C), making it suitable for synchronous rectification in ATX/server/telecom power supplies, battery protection circuits, and motor drives. The device offers low on-resistance (4.0 mΩ typical at Vgs=10V) and low gate charge (92 nC typical), reducing conduction and switching losses. It is RoHS compliant and Pb-Free. The TO-247-3 through-hole package provides excellent thermal performance with a junction-to-case thermal resistance of 0.48°C/W and a maximum power dissipation of 310W. The device also supports avalanche energy up to 475 mJ (single pulse).
| Qty | Low | High |
|---|---|---|
| 1+ | $8.34 | $8.34 |
| 10+ | $5.44 | $5.44 |
| 120+ | $4.46 | $4.46 |
| 510+ | $3.93 | $3.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V.
80A at Tc < 144°C and Vgs=10V.
TO-247-3 through-hole package.
Yes, it is RoHS compliant and Pb-Free.
-55°C to 175°C (junction).
4.0 mΩ at Vgs=10V and Id=80A.
138 nC at Vgs=10V.