FDG8842CZ

The FDG8842CZ is a complementary N/P-Channel enhancement mode MOSFET array from ON Semiconductor utilizing PowerTrench technology. The N-Channel Q1 is rated for 30V drain-source voltage and 750mA continuous drain current, with a maximum on-resistance of 0.4Ω at Vgs=4.5V. The P-Channel Q2 is rated for -25V drain-source voltage and -410mA continuous drain current, with a maximum on-resistance of 1.1Ω at Vgs=-4.5V. Both devices feature logic level gate thresholds (Vgs(th) < 1.5V) allowing direct drive from low voltage logic circuits.

This device is designed for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. The complementary pair eliminates the need for external bias resistors. The array is housed in a surface mount SC70-6 package (also known as 6-TSSOP, SC-88, SOT-363) with a small footprint ideal for space-constrained designs.

Electrical characteristics include input capacitance of 120pF (max) at Vds=10V and gate charge of 1.44nC (max) at Vgs=4.5V. The device operates over a junction temperature range of -55°C to 150°C. Thermal resistance junction-to-ambient is 350°C/W (single operation, Note 1a) and 415°C/W (Note 1b).

The FDG8842CZ is RoHS3 compliant and supplied in tape and reel packaging with 3000 units per 7" reel on 8mm tape.