| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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602,667 pcs
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602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,719 pcs
|
7719 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
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5,683 pcs
|
5683 pcs | On Request | 1 | On Request | On Request | 1439+ | On Request | On Request | |
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2,900 pcs
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2900 pcs | On Request | 1 | On Request | On Request | 08+08 | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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325 pcs
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325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDG6335N is a dual N-Channel MOSFET designed and manufactured by On Semiconductor. It is rated for a maximum drain-source voltage of 20V and a continuous drain current of 0.7A at 25°C, with a pulsed current capability of 2.1A. The device features a low drain-source on-resistance of 300 mOhm (maximum) at VGS = 4.5V and ID = 700 mA, and 400 mOhm at VGS = 2.5V. The gate charge is typically 1.1 nC (maximum 1.4 nC) at VGS = 4.5V, and the input capacitance is 113 pF (maximum) at VDS = 10V. The threshold voltage is 1.5V maximum at ID = 250 µA, and the gate is logic-level compatible. The device is housed in a 6-TSSOP, SC-88, SOT-363 surface-mount package (supplier package SC-88/SC-70-6) and is rated for an operating junction temperature range of -55°C to +150°C. The thermal resistance from junction to ambient is 415°C/W when mounted on a minimum pad. The FDG6335N is Pb-free and RoHS compliant. It is suitable for DC-DC converters, power management, and load switching applications.
The maximum drain-source voltage (VDSS) is 20 V.
The continuous drain current is 0.7 A at TA = 25°C.
The maximum drain-source on-resistance is 300 mΩ at VGS = 4.5 V and ID = 700 mA.
The FDG6335N is available in a 6-TSSOP, SC-88, SOT-363 surface-mount package (supplier device package SC-88/SC-70-6).
The operating junction temperature range is -55°C to +150°C.
Yes, the FDG6335N is RoHS3 compliant and Pb-free, as stated in the datasheet.