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FDG6332C-F085 N and P-Channel MOSFET array with 20V drain-source voltage, 700mA (N) and 600mA (P) drain current. Features logic level gate and low on-resistance of 300mOhm at 4.5V.
Mfr Part #:

FDG6332C-F085

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N and P-Channel MOSFET array with 20V drain-source voltage, 700mA (N) and 600mA (P) drain current. Features logic level gate and low on-resistance of 300mOhm at 4.5V.
✓ Total Stock: 434,382 pcs

FDG6332C-F085 Available from 2 distributors

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✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
431,281 pcs
On Request
431281 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,101 pcs
On Request
3101 pcs On Request 1 On Request On Request On Request On Request On Request
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FDG6332C-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDG6332C-F085 Description

Short technical summary and product information.

The FDG6332C-F085 is a dual N and P-Channel MOSFET array from On Semiconductor, designed for low-voltage applications. It features a drain-source voltage rating of 20V and drain currents of 700mA for the N-channel and 600mA for the P-channel.

 

Key electrical characteristics include a maximum on-resistance of 300mOhm at Vgs=4.5V and Id=700mA, a gate threshold voltage of 1.5V at 250µA, and a logic level gate for easy drive from low-voltage logic. Gate charge is 1.5nC and input capacitance is 113pF, enabling efficient switching.

 

The device is housed in a compact SC-88 (SC-70-6) surface mount package, suitable for space-constrained designs. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 300mW.

 

This MOSFET array is ideal for load switching, power management, and signal routing in portable electronics, automotive systems, and other low-power applications. The complementary N and P-channel configuration simplifies circuit design.

FDG6332C-F085 Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: FDG6332C-F085 N and P-Channel MOSFET Array
Subcategory: N and P-Channel

FDG6332C-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG6332C-F085 Features

  • Dual N and P-Channel MOSFET array.
  • 20V drain-source voltage rating.
  • 700mA N-channel, 600mA P-channel current.
  • Logic level gate for low-voltage drive.
  • Compact SC-88 surface mount package.

FDG6332C-F085 Applications

  • Load switching in portable electronics.
  • Power management in battery-powered devices.
  • Signal routing and level shifting.
  • Complementary pair for H-bridge circuits.

FDG6332C-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V.

What package does the FDG6332C-F085 come in?

6-TSSOP, SC-88, SOT-363 (SC-88 SC-70-6).

What is the operating temperature range?

-55°C to 150°C.

Is the FDG6332C-F085 RoHS compliant?

RoHS3 Compliant (unverified).

What is the configuration of this MOSFET array?

N and P-Channel.

What is the maximum drain current?

700mA for N-channel, 600mA for P-channel.

What is the on-resistance?

300mOhm at Vgs=4.5V and Id=700mA.

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