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FDG6332C Complementary N and P-Channel MOSFET. Drain-source voltage 20V, continuous drain current 0.7A (N) / 0.6A (P). Surface mount SC-88 package.
Mfr Part #:

FDG6332C

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
Complementary N and P-Channel MOSFET. Drain-source voltage 20V, continuous drain current 0.7A (N) / 0.6A (P). Surface mount SC-88 package.
✓ Total Stock: 447,334 pcs

FDG6332C Available from 5 distributors

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FDG6332C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDG6332C Description

Short technical summary and product information.

The FDG6332C is a complementary N and P-Channel MOSFET from onsemi, built with advanced PowerTrench technology to minimize on-state resistance while maintaining superior switching performance.

 

Key electrical specifications include a drain-source voltage rating of 20V for the N-channel and -20V for the P-channel. Continuous drain current is rated at 0.7A (N-channel) and 0.6A (P-channel), with pulsed current capability of 2.1A and 2A respectively. On-resistance is as low as 300mΩ for the N-channel at Vgs=4.5V and 420mΩ for the P-channel at Vgs=-4.5V. The device features logic-level gate drive with gate threshold voltage of 1.5V maximum.

 

The device is designed for DC-DC converter, load switch, and LCD display inverter applications. It is packaged in the compact SC-88 (SC-70-6) surface mount package with a 0.3W power dissipation rating and operating junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and Pb-free.

FDG6332C Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: On Semiconductor FDG6332C N and P-Channel PowerTrench MOSFET
Subcategory: N and P-Channel Array

FDG6332C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDG6332C Features

  • Complementary N and P-Channel MOSFET design.
  • 20V drain-source voltage rating.
  • Low on-resistance with logic level gate.
  • Compact SC-88 surface mount package.
  • RoHS3 compliant and Pb-free.

FDG6332C Applications

  • Used in DC-DC converter circuits.
  • Ideal for load switching applications.
  • Suitable for LCD display inverters.

FDG6332C FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDG6332C?

The N-channel drain-source voltage is 20V and the P-channel is -20V.

What package is the FDG6332C available in?

The FDG6332C comes in a 6-TSSOP, SC-88, SOT-363 surface mount package. The supplier device package is SC-88 (SC-70-6).

What is the operating temperature range of the FDG6332C?

The operating junction temperature range is -55°C to 150°C.

Is the FDG6332C RoHS compliant?

Yes, the FDG6332C is RoHS3 compliant and Pb-free, as verified in the datasheet.

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