BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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5,850 pcs
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5850 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The FDG6322C from Fairchild Semiconductor is a dual N-channel and P-channel enhancement mode field-effect transistor designed for low-voltage applications. It utilizes Fairchild's proprietary DMOS technology for high cell density and minimized on-state resistance.
This device features a drain-source voltage of 25V for the N-channel and -25V for the P-channel. The N-channel offers an on-resistance as low as 2.6 Ohms (typical) at VGS = 4.5V and ID = 0.22A, while the P-channel offers an on-resistance of 0.85 Ohms (typical) at VGS = -4.5V and ID = -0.41A. The low gate threshold voltage allows for direct operation in 3V circuits.
The FDG6322C is housed in a very small SC70-6 package, making it suitable for space-constrained designs. Its dual FET configuration can replace multiple discrete digital transistors, simplifying circuit design and reducing component count. The integrated Gate-Source Zener provides ESD ruggedness.
This FET is designed as a replacement for bipolar digital transistors and small signal MOSFETs in low-voltage applications.
| Qty | Low | High |
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| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-Channel Drain-Source Voltage (BVDSS) is 25 V.
The P-Channel Drain-Source Voltage (BVDSS) is -25 V.
The maximum continuous drain current for the N-Channel is 0.22 A.
The maximum continuous drain current for the P-Channel is -0.41 A.
The operating and storage temperature range is -55 to 150 °C.
The typical N-Channel On-State Resistance at VGS = 4.5V and ID = 0.22A is 2.6 Ohms.
The typical P-Channel On-State Resistance at VGS = -4.5V and ID = -0.41A is 0.85 Ohms.