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FDG6322C N and P-Channel MOSFET array with 25V drain-source voltage and 220mA/410mA drain current. Features logic level gate and surface mount SC-88 package.
Mfr Part #:

FDG6322C

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N and P-Channel MOSFET array with 25V drain-source voltage and 220mA/410mA drain current. Features logic level gate and surface mount SC-88 package.
Total Stock: 7,553 pcs
$ Price Range: $0.16 - $0.71

FDG6322C Available from 3 distributors

Authorised
Non-Authorised

FDG6322C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Current (@ P-Channel)
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
drain_source_on_resistance (Maximum @ VGS=2.7 V)

FDG6322C Description

Short technical summary and product information.

The FDG6322C is a dual N and P-Channel MOSFET array from ON Semiconductor, designed for low-power switching applications. It features a drain-source voltage rating of 25V and drain currents of 220mA (N-Channel) and 410mA (P-Channel). The device integrates both channel types in a single surface-mount package, enabling compact designs.

 

Key electrical characteristics include a maximum on-resistance of 4Ω at 4.5V gate drive for the N-Channel and 5Ω at 2.7V for the P-Channel. The logic level gate threshold allows direct drive from low-voltage logic. Gate charge is only 0.4nC, and input capacitance is 9.5pF, enabling high-speed switching with minimal drive power.

 

The device is housed in a 6-TSSOP/SC-88/SOT-363 package, suitable for automated assembly. Operating temperature range is -55°C to 150°C. Power dissipation is 300mW. The complementary N and P-Channel configuration makes it ideal for use in half-bridge drivers, level shifters, and analog switches.

FDG6322C Quick Information

Product Type: MOSFET Array
Canonical Name: FDG6322C - N and P-Channel MOSFET, 25V, 220mA/410mA, SC-88
Subcategory: Small Signal MOSFET

FDG6322C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG6322C Estimated Pricing

Qty Low High
1+ $0.71 $0.71
3,000+ $0.18 $0.18
6,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG6322C Features

  • Dual N and P-Channel MOSFET array.
  • 25V drain-source voltage rating.
  • Logic level gate for low-voltage drive.
  • Low on-resistance: 4Ω N-Ch, 5Ω P-Ch.
  • Compact SC-88 surface mount package.

FDG6322C Applications

  • Ideal for battery-powered portable devices.
  • Used in load switching and level shifting.
  • Suitable for DC-DC converter output stages.
  • Perfect for analog switch applications.

FDG6322C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDG6322C?

25V.

What package does the FDG6322C come in?

6-TSSOP, SC-88, SOT-363; supplier device package SC-88 (SC-70-6).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDG6322C RoHS compliant?

RoHS3 compliant (unverified).

What are the drain current ratings for N and P channels?

N-Channel: 220mA; P-Channel: 410mA.

What is the gate threshold voltage?

Maximum 1.5V at 250µA drain current.

What is the on-resistance for the N-Channel?

4Ω maximum at Vgs=4.5V, Id=220mA.

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