| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
138,441 pcs
|
138441 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,619 pcs
|
1619 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,611 pcs
|
1611 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,611 pcs
|
1611 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
47 pcs
|
47 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDG6321C is a dual N and P-Channel logic level enhancement mode MOSFET array from On Semiconductor. It is designed for low voltage applications and can replace bipolar digital transistors and small signal MOSFETs without requiring bias resistors.
Key electrical specifications include a drain-source voltage rating of 25V for both channels, continuous drain current of 500mA for the N-Channel and 410mA for the P-Channel, and a maximum on-resistance of 450mOhm at Vgs=4.5V. The gate threshold voltage is typically 1.5V, allowing direct operation from 3V logic circuits. The device features a gate-source Zener diode for ESD protection up to 6kV (Human Body Model).
The FDG6321C is housed in a compact SC-88 (SC-70-6) surface mount package, making it suitable for space-constrained designs. It has a maximum power dissipation of 300mW and an operating temperature range of -55°C to 150°C. The device is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.21 | $0.21 |
| 6,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25V for both N-Channel and P-Channel.
The FDG6321C is available in an SC-88 (SC-70-6) surface mount package.
The operating temperature range is -55°C to 150°C (junction temperature).
Yes, the FDG6321C is Pb-free and RoHS compliant as stated in the datasheet.
The N-Channel is rated for 500mA continuous, and the P-Channel is rated for 410mA continuous.
The maximum on-resistance is 450mOhm at Id=500mA, Vgs=4.5V for N-Channel and at Id=-410mA, Vgs=-4.5V for P-Channel.
Yes, it includes a gate-source Zener for ESD ruggedness, rated at 6kV Human Body Model.