FDG6320C

The FDG6320C is a dual N and P-Channel logic level enhancement mode field effect transistor produced by On Semiconductor using their proprietary DMOS technology. This device is designed for low voltage applications and can replace bipolar digital transistors and small signal MOSFETs without requiring bias resistors. The N-Channel MOSFET has a drain-source voltage rating of 25V and a continuous drain current of 220mA, with a pulsed current capability of 650mA. The P-Channel MOSFET has a drain-source voltage rating of -25V and a continuous drain current of -140mA (pulsed -400mA). Gate-source voltage is rated at 8V for N-Channel and -8V for P-Channel. The device features logic level gate drive with a gate threshold voltage of less than 1.5V, allowing direct operation in 3V circuits. On-resistance for the N-Channel at Vgs=4.5V is 4Ω maximum, and for the P-Channel at Vgs=-4.5V is 10Ω maximum. The device also includes a gate-source Zener for ESD ruggedness, rated at 6kV human body model. Power dissipation is 300mW. The FDG6320C is housed in a compact SC-88 (SC-70-6) surface mount package, which is very small and suitable for space-constrained designs. Operating temperature range is -55°C to 150°C. The device is Pb-Free and RoHS compliant (unverified). This dual digital FET is ideal for low voltage portable electronics, load switching, and power management applications.