| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDG6318PZ is a dual P-Channel enhancement-mode MOSFET from On Semiconductor, designed for low-power switching applications. It integrates two independent P-Channel MOSFETs in a compact 6-TSSOP, SC-88, SOT-363 package.
Key electrical specifications include a maximum drain-to-source voltage of 20V, continuous drain current of 500mA, and a low on-resistance of 780mOhm at 4.5V gate drive. The logic level gate threshold voltage of 1.5V allows direct drive from low-voltage logic circuits. The device features low gate charge (1.62nC) and input capacitance (85.4pF), enabling efficient high-frequency switching.
The FDG6318PZ is rated for operation from -55°C to 150°C junction temperature, making it suitable for demanding environments. It is surface-mountable and RoHS compliant, supporting lead-free soldering processes.
The maximum drain-to-source voltage (Vdss) is 20V.
The maximum continuous drain current is 500mA.
The maximum on-resistance (Rds(on)) is 780mOhm at Vgs=4.5V and Id=500mA.
It is available in a 6-TSSOP, SC-88, SOT-363 surface-mount package. The supplier device package is SC-88 (SC-70-6).
The operating junction temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 Compliant, though this is unverified.
The maximum gate threshold voltage (Vgs(th)) is 1.5V at Id=250µA.