FDG6317NZ

The FDG6317NZ is a dual N-channel MOSFET from onsemi, designed for efficient power management in DC-DC converters and load-switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 0.7A, with a pulsed current capability of 2.1A. The device offers low on-resistance of 400mΩ at VGS=4.5V and 550mΩ at VGS=2.5V, enabling efficient operation in low-voltage circuits.

This MOSFET incorporates high-performance trench technology and a logic-level gate, allowing direct drive from low-voltage control signals. The gate-source voltage rating is ±12V, and the device includes a gate-source Zener for ESD ruggedness, rated at HBM Class 1C. With a low gate charge of 1.1nC and input capacitance of 66.5pF, it is well-suited for high-frequency switching applications.

The FDG6317NZ is housed in a compact SC70-6 surface-mount package (also known as SC-88 or SOT-363), making it ideal for space-constrained designs. It operates over a junction temperature range of -55°C to +150°C and has a power dissipation rating of 0.3W for single operation. The device is Pb-free and RoHS compliant, supporting environmentally conscious manufacturing.

Typical applications include DC-DC converters, power management circuits, and load switches, where its dual-channel configuration and small footprint provide design flexibility. The thermal resistance from junction to ambient is 415°C/W when mounted on a minimum pad, which should be considered for thermal management in high-power applications.