| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,525 pcs
|
4525 pcs | On Request | 1 | On Request | On Request | 1536 | On Request | On Request | |
|
3,388 pcs
|
3388 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
2,313 pcs
|
2313 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,259 pcs
|
1259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDG6316P is a dual P-Channel MOSFET designed by onsemi using advanced low voltage POWERTRENCH technology. It is optimized for battery power management and load switch applications in portable electronics. The device features a 12V drain-source voltage rating and a continuous drain current of 0.7A (pulsed up to 1.8A). With a logic-level gate, it can be driven by low-voltage control signals. The on-resistance (RDS(on)) is specified at 270mΩ maximum at VGS=4.5V, 360mΩ at VGS=2.5V, and 650mΩ at VGS=1.8V, enabling efficient operation at various gate drive voltages. The gate charge is low at 2.4nC, and input capacitance is 146pF, supporting fast switching. The device is housed in a compact industry-standard SC-70-6 (SC-88) surface-mount package, suitable for space-constrained designs. It is RoHS compliant and Pb-free. The operating temperature range is -55°C to 150°C, with a junction-to-ambient thermal resistance of 415°C/W. This MOSFET array is ideal for battery management, load switching, and other low-voltage power management applications.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.14 | $0.14 |
| 6,000+ | $0.13 | $0.13 |
| 9,000+ | $0.12 | $0.12 |
| 30,000+ | $0.12 | $0.12 |
| 75,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 12V.
The FDG6316P is available in a 6-TSSOP, SC-88, SOT-363 package, with the supplier device package being SC-88 (SC-70-6).
The operating temperature range is -55°C to 150°C (junction temperature).
Yes, the FDG6316P is RoHS3 compliant and Pb-free.
Yes, it features a logic-level gate with a maximum gate threshold voltage of 1.5V at 250µA, enabling operation with low-voltage signals.
It is a dual P-Channel MOSFET with two independent P-Channel devices in a single package.