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FDG6308P The FDG6308P is a dual P-channel logic-level MOSFET from ON Semiconductor. It is rated for 20V drain-source voltage and 600mA drain current in a surface-mount SC-88 package.
Mfr Part #:

FDG6308P

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDG6308P is a dual P-channel logic-level MOSFET from ON Semiconductor. It is rated for 20V drain-source voltage and 600mA drain current in a surface-mount SC-88 package.
✓ Total Stock: 725,894 pcs

FDG6308P Available from 3 distributors

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Romaks Technologies ✓
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723,200 pcs
On Request
723200 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
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1,347 pcs
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1347 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
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1,347 pcs
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1347 pcs On Request 1 On Request On Request On Request On Request On Request
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FDG6308P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDG6308P Description

Short technical summary and product information.

The FDG6308P from ON Semiconductor is a dual P-channel MOSFET array in a compact surface-mount package. It combines two P-channel MOSFETs with logic-level gate capability, making it suitable for low-voltage switching and load-control applications.

 

The device is rated for a maximum drain-to-source voltage of 20V and a continuous drain current of 600mA. Maximum on-resistance is 400mΩ at Id=600mA and Vgs=4.5V, with a maximum gate threshold voltage of 1.5V at Id=250µA. Gate charge is limited to 2.5nC at Vgs=4.5V, and input capacitance is 153pF at Vds=10V, enabling fast and efficient switching in low-power circuits.

 

The MOSFET supports a maximum power dissipation of 300mW and operates over a junction temperature range of -55°C to 150°C. It is supplied in 6-TSSOP/SC-88/SOT-363 compatible packaging, specifically offered in SC-88 (SC-70-6). The surface-mount footprint is well suited for space-constrained PCB layouts in consumer and industrial electronics.

FDG6308P Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: Dual P-Channel MOSFET (20V, 600mA)
Subcategory: MOSFET Arrays

FDG6308P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG6308P Features

  • Dual P-channel MOSFET in compact package.
  • Rated for 20V drain-source voltage.
  • Handles 600mA drain current.
  • Logic-level gate for low-voltage control.
  • Low on-resistance of 400mΩ max.

FDG6308P Applications

  • Good for high-side load switching.
  • Useful in battery-powered devices.
  • Fits space-constrained board designs.

FDG6308P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) of the FDG6308P?

The maximum drain-to-source voltage is 20V.

What is the maximum drain current of the FDG6308P?

The maximum drain current is 600mA.

What is the operating temperature range of the FDG6308P?

The operating temperature range is -55°C to 150°C (junction temperature).

What is the package type of the FDG6308P?

The device is available in 6-TSSOP, SC-88, and SOT-363 packages, with supplier package SC-88 (SC-70-6).

Is the FDG6308P RoHS compliant?

The product data indicates RoHS3 compliance, though this is not independently verified.

Does the FDG6308P have a logic-level gate?

Yes, the FET feature is logic-level gate, enabling low-voltage gate drive.

What is the maximum on-resistance of the FDG6308P at 4.5V gate drive?

The maximum on-resistance is 400mΩ at Id=600mA and Vgs=4.5V.

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