FDG6306P Dual P-Channel MOSFET with 20V drain-source voltage and 600mA continuous drain current. Packaged in a compact SC-88 surface mount package.
Mfr Part #:

FDG6306P

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual P-Channel MOSFET with 20V drain-source voltage and 600mA continuous drain current. Packaged in a compact SC-88 surface mount package.
✓ Total Stock: 476,200 pcs
$ Price Range: $0.14

FDG6306P Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDG6306P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDG6306P Description

Short technical summary and product information.

The FDG6306P is a dual P-Channel MOSFET from On Semiconductor, utilizing advanced PowerTrench technology. It is designed for power management applications requiring a wide gate drive voltage range from 2.5V to 12V.

 

Key electrical specifications include a maximum drain-source voltage of 20V, continuous drain current of 600mA, and pulsed drain current of 2.0A. The device features low on-resistance: typical 300mΩ at VGS=-4.5V and 470mΩ at VGS=-2.5V, with maximum values of 420mΩ and 630mΩ respectively. Gate charge is a low 2nC at VGS=-4.5V, and input capacitance is 114pF at VDS=-10V. The gate threshold voltage is typically -1.2V, with a range of -0.6V to -1.5V.

 

Common applications include battery management, load switching, and other power management functions. The device is packaged in a compact SC-88 (SC-70-6) surface mount package, suitable for space-constrained designs. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel.

 

Operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 300mW for single operation. The FDG6306P is Pb-Free and RoHS3 compliant, ensuring environmental compliance.

FDG6306P Quick Information

Product Type: Dual P-Channel MOSFET
Series: FDG6306P
Canonical Name: On Semiconductor FDG6306P Dual P-Channel MOSFET, 20V Vds, 0.6A Id, SC-88 Package
Subcategory: MOSFET Arrays

FDG6306P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDG6306P Estimated Pricing

Qty Low High
6,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG6306P Features

  • Dual P-Channel MOSFET in SC-88 package.
  • Rated for 20V drain-source voltage.
  • Continuous drain current of 600mA.
  • Logic level gate drive compatible.
  • Low on-resistance down to 420mΩ.

FDG6306P Applications

  • Ideal for battery management circuits.
  • Used in load switch applications.
  • Suitable for power management modules.

FDG6306P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V maximum.

What package does the FDG6306P come in?

It is available in SC-88 (SC-70-6) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDG6306P RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free as per the datasheet.

What is the typical on-resistance?

Typical on-resistance is 300mΩ at VGS=-4.5V, ID=-0.6A.

What is the gate threshold voltage?

Gate threshold voltage is typically -1.2V, with a range of -0.6V to -1.5V.

What is the maximum gate-source voltage?

±12V maximum.

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