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FDG6303N Dual N-Channel logic level MOSFET from On Semiconductor. Features 25V Vdss, 500mA continuous drain current, and low on-resistance of 450mΩ at 4.5V gate drive.
Mfr Part #:

FDG6303N

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel logic level MOSFET from On Semiconductor. Features 25V Vdss, 500mA continuous drain current, and low on-resistance of 450mΩ at 4.5V gate drive.
✓ Total Stock: 42,140 pcs

FDG6303N Available from 8 distributors

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FDG6303N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDG6303N Description

Short technical summary and product information.

The FDG6303N is a dual N-channel enhancement mode field effect transistor produced using onsemi's high cell density DMOS technology. It is designed for low voltage applications and can replace bipolar digital transistors and small signal MOSFETs.

 

Key electrical specifications include a drain-source voltage rating of 25V, continuous drain current of 500mA, and pulsed current of 1.5A. On-resistance is 450mΩ maximum at Vgs=4.5V and 600mΩ at Vgs=2.7V. The gate threshold voltage is less than 1.5V, enabling direct operation from 3V logic circuits. The device features integrated gate-source Zener diodes for ESD protection rated at 6kV Human Body Model.

 

Packaged in the compact industry standard SC-88 (SC-70-6, SOT-363) surface mount package, the FDG6303N is suitable for space-constrained designs. It is Pb-free and RoHS3 compliant. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 300mW and junction-to-ambient thermal resistance of 415°C/W.

FDG6303N Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel Logic Level MOSFET, 25V, 500mA, SC-88
Subcategory: Logic Level Gate MOSFETs

FDG6303N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDG6303N Features

  • Dual N-Channel logic level MOSFET.
  • 25V drain-source voltage rating.
  • 500mA continuous drain current.
  • Low on-resistance of 450mΩ at 4.5V.
  • ESD ruggedness >6kV Human Body Model.

FDG6303N Applications

  • Ideal for low voltage switching circuits.
  • Used in portable electronics.
  • Suitable for load switching applications.
  • Direct drive from 3V logic circuits.
  • Replacement for bipolar digital transistors.

FDG6303N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDG6303N?

The drain-source voltage rating is 25V.

What is the continuous drain current rating?

The continuous drain current is 500mA.

What package is the FDG6303N available in?

It is available in SC-88 (SC-70-6, SOT-363) surface mount package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is the FDG6303N RoHS compliant?

Yes, the device is RoHS3 compliant as stated in the datasheet.

What is the on-resistance at typical gate voltages?

On-resistance is 450mΩ maximum at Vgs=4.5V and 600mΩ maximum at Vgs=2.7V.

What is the ESD rating of the device?

The ESD rating is 6kV (Human Body Model).

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