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FDG6303 The onsemi FDG6303N is a dual N-channel MOSFET array designed for various applications. It features a 25V drain-source voltage and 500mA continuous drain current.
Mfr Part #:

FDG6303

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The onsemi FDG6303N is a dual N-channel MOSFET array designed for various applications. It features a 25V drain-source voltage and 500mA continuous drain current.
✓ Total Stock: 423 pcs
$ Price Range: $1.64

FDG6303 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
423 pcs
On Request
423 pcs On Request 1 On Request On Request On Request On Request On Request
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FDG6303 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Vgs(th) (Max) @ Id
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FDG6303 Description

Short technical summary and product information.

The FDG6303N from onsemi is a dual N-channel MOSFET array, categorized under discrete semiconductor products. This component is designed for surface mount applications and comes in an SC-88 (SC-70-6) package.

 

Key electrical specifications include a Drain to Source Voltage (Vdss) of 25V and a continuous Drain Current (Id) of 500mA at 25°C. The Rds On is a maximum of 450mOhm at 500mA and 4.5V Vgs. The threshold voltage (Vgs(th)) is typically 1.5V at 250µA. Gate charge (Qg) is a maximum of 2.3nC at 4.5V Vgs, and input capacitance (Ciss) is a maximum of 50pF at 10V Vds.

 

This MOSFET array has a maximum power dissipation of 300mW and operates within a temperature range of -55°C to 150°C (TJ). It is RoHS3 compliant and has an MSL rating of 1.

 

The FDG6303N is suitable for applications requiring compact and efficient switching or amplification. Its surface mount package facilitates integration into dense circuit designs.

FDG6303 Quick Information

Product Type: MOSFET Array
Canonical Name: FDG6303N Dual 2 N-Channel MOSFET Array
Subcategory: Dual N-Channel

FDG6303 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG6303 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG6303 Features

  • Dual N-channel MOSFET array.
  • 25V Drain to Source Voltage (Vdss).
  • 500mA continuous drain current.
  • 300mW maximum power dissipation.
  • Surface mount SC-88 package.

FDG6303 Applications

  • Ideal for low-power load switching circuits.
  • Suitable for signal routing in portable devices.
  • Used in power management for battery-powered systems.
  • Applicable in small-signal amplification stages.

FDG6303 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDG6303?

The FDG6303 has a maximum drain-to-source voltage (Vdss) of 25V.

What is the continuous drain current rating?

The continuous drain current (Id) at 25°C is 500mA.

What is the package type of the FDG6303?

The FDG6303 is available in a surface-mount package: 6-TSSOP, SC-88, SOT-363, also referred to as SC-70-6.

What is the operating temperature range?

The FDG6303 operates over a junction temperature range of -55°C to 150°C.

What is the FET type of the FDG6303?

The FDG6303 consists of two N-channel MOSFETs in a single package (dual N-channel).

What is the maximum on-resistance of the FDG6303?

The maximum on-resistance (Rds on) is 450mOhm at 500mA drain current and 4.5V gate-to-source voltage.

What is the gate threshold voltage of the FDG6303?

The maximum gate threshold voltage (Vgs(th)) is 1.5V at a drain current of 250µA.

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