DistyParts Icon
FDG6302P Dual P-Channel logic level enhancement mode MOSFET. -25V drain-source voltage, 140mA continuous drain current, 10Ω max on-resistance at VGS=-4.5V.
Mfr Part #:

FDG6302P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual P-Channel logic level enhancement mode MOSFET. -25V drain-source voltage, 140mA continuous drain current, 10Ω max on-resistance at VGS=-4.5V.
✓ Total Stock: 970 pcs
$ Price Range: $0.36

FDG6302P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
970 pcs
On Request
970 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request 2026-05-08 07:15:29
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDG6302P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
View Similar Products (0)

FDG6302P Description

Short technical summary and product information.

The FDG6302P is a dual P-Channel logic level enhancement mode MOSFET from On Semiconductor (onsemi) built with high cell density DMOS technology. It delivers -25V drain-source breakdown voltage with continuous drain current of -140mA and pulsed current capability of -400mA. The device features low on-resistance: 10Ω maximum at VGS=-4.5V and 13Ω maximum at VGS=-2.7V, making it suitable for low-voltage 3V logic-driven circuits.

 

Gate threshold voltage ranges from 0.65V minimum to 1.5V maximum, allowing direct operation from low-voltage control signals. Input capacitance is 12pF typical and gate charge is 0.31nC maximum, enabling fast switching with turn-on delay of 12ns and turn-off delay of 18ns. The part includes an integrated gate-source Zener for ESD protection rated at 6kV human body model.

 

Housed in a compact SC-70-6 surface mount package, the FDG6302P occupies minimal board space. Power dissipation is 300mW on FR4 board with junction-to-ambient thermal resistance of 415°C/W. Operating junction temperature range is -55°C to +150°C.

FDG6302P Quick Information

Product Type: MOSFET Array
Canonical Name: FDG6302P Dual P-Channel Logic Level Enhancement Mode MOSFET
Subcategory: Dual P-Channel

FDG6302P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG6302P Estimated Pricing

Qty Low High
826+ $0.36 $0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG6302P Features

  • Dual P-Channel MOSFET in SC-70-6 package.
  • 25V drain-source voltage with 140mA continuous current.
  • Low on-resistance: 10Ω max at VGS=-4.5V.
  • Logic level gate threshold below 1.5V maximum.
  • Integrated ESD protection rated to 6kV HBM.

FDG6302P Applications

  • Used in low-voltage load switching circuits.
  • Suitable for battery management and power distribution.
  • Ideal for portable and handheld device power control.
  • Replacement for bipolar digital transistors and small MOSFETs.
  • Works with 3V logic level gate drive signals.

FDG6302P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDG6302P?

The drain-source voltage rating is -25 V.

What is the continuous drain current rating?

Continuous drain current is -140 mA at TA=25°C.

What package is the FDG6302P available in?

It comes in an SC-70-6 surface mount package (also known as SC-88).

What is the operating temperature range?

The junction temperature range is -55°C to +150°C.

What is the on-resistance at VGS=-4.5V?

Maximum on-resistance is 10 Ω with typical value of 7.3 Ω at VGS=-4.5V and ID=-0.14A.

Does the FDG6302P have ESD protection?

Yes, it features an integrated gate-source Zener rated for 6 kV HBM ESD per MIL-STD-883D.

What is the typical gate charge of the FDG6302P?

Total gate charge is 0.31 nC maximum and 0.22 nC typical at VGS=-4.5V.

Home
Account

Categories