| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Configuration | |
| Current | |
| Drain Current - Pulsed (IDM) | |
| Drain to Source On Resistance (Typical/Maximum @ ID=190 mA, VGS=2.7 V) | |
| Drain to Source On Resistance (Typical/Maximum @ ID=220 mA, VGS=4.5 V, TJ=125 °C) | |
| Drain to Source Voltage (Vdss) | |
| ESD Rating | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Vgs(th) (Max) @ Id |
The FDG6301N-F085P is a dual N-Channel enhancement-mode MOSFET from ON Semiconductor, designed for low voltage applications. It features two independent MOSFETs in a compact SC70-6 surface mount package.
With a maximum drain-source voltage of 25V and continuous drain current of 0.22A (TA=25°C), it offers a low on-resistance of 4 ohms (max) at VGS=4.5V. The device is logic-level gate compatible, with a gate threshold voltage as low as 0.65V typical, enabling direct operation from 3V circuits. It also includes a gate-source Zener for ESD protection up to 6 kV (HBM).
This MOSFET array is suitable for low voltage switching applications, such as replacing bipolar digital transistors and small signal MOSFETs. The devices are AEC-Q101 qualified and PPAP capable, making them suitable for automotive applications. The package is RoHS compliant and halogen-free.
25V maximum.
SC-88 (SC-70 6 Lead) surface mount package.
-55°C to 150°C (junction).
Yes, it is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.
6 kV (HBM) per MIL-STD-883D.
0.65V typical, 1.5V maximum at ID=250µA.