FDG6301N_F085 The On Semiconductor FDG6301N-F085 is a dual N-channel MOSFET with a 25V drain-source voltage and 220mA continuous drain current. It is supplied in an SC88 surface-mount package.
Mfr Part #:

FDG6301N_F085

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor FDG6301N-F085 is a dual N-channel MOSFET with a 25V drain-source voltage and 220mA continuous drain current. It is supplied in an SC88 surface-mount package.
✓ Total Stock: 301,114 pcs
$ Price Range: $0.99

FDG6301N_F085 Available from 2 distributors

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301,000 pcs
301000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
114 pcs
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FDG6301N_F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
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AEC Qualified
Automotive Grade
Configuration
Gate Charge
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SVHC Present
Tape & Reel
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FDG6301N_F085 Description

Short technical summary and product information.

The FDG6301N-F085 from On Semiconductor is a dual N-channel MOSFET designed for various electronic applications. This component features a maximum drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 220mA at 25°C. Its on-resistance (Rds On) is a maximum of 4 Ohms when tested at 220mA and 4.5V gate-source voltage.

 

The MOSFET has a logic-level gate feature, making it suitable for low-voltage control applications. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA, and the gate charge (Qg) is a maximum of 0.4nC at 4.5V.

 

This device is housed in an SC88 surface-mount package, facilitating integration into compact circuit designs. The technology utilized is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).

 

Key electrical characteristics include a 25V drain-to-source breakdown voltage and a 220mA continuous drain current. The device is configured as two N-channel MOSFETs within a single package.

FDG6301N_F085 Quick Information

Product Type: MOSFET Array
Series: FDG6301N
Canonical Name: FDG6301N-F085 Dual N-Channel MOSFET
Subcategory: FET, MOSFET Arrays

FDG6301N_F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDG6301N_F085 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG6301N_F085 Features

  • Dual N-channel MOSFET configuration.
  • 25V drain-to-source voltage rating.
  • 220mA continuous drain current.
  • Logic-level gate feature.
  • SC88 surface-mount package.

FDG6301N_F085 Applications

  • Suitable for low-voltage switching.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Applicable for signal switching.

FDG6301N_F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDG6301N_F085?

The maximum drain-to-source voltage is 25V.

What is the continuous drain current rating?

The continuous drain current at 25°C is 220mA.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 4 ohm at a drain current of 220mA and gate-source voltage of 4.5V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.5V at a drain current of 250µA.

What is the gate charge of the FDG6301N_F085?

The maximum gate charge is 0.4nC at a gate-source voltage of 4.5V.

What package is the FDG6301N_F085 available in?

The FDG6301N_F085 comes in an SC88 surface-mount package.

Is this a logic-level MOSFET?

Yes, it features a logic-level gate, allowing direct drive from low-voltage logic circuits.

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