| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDG6301N_D87Z is a dual N-channel logic level enhancement mode MOSFET from onsemi. It is designed for low voltage applications, offering a drain-source voltage of 25V and continuous drain current of 0.22A. The device features a very low on-resistance of 4 Ohm at 4.5V gate drive, making it suitable for battery-powered and portable electronics.
This MOSFET incorporates gate-source Zener protection for ESD ruggedness, rated at 6kV human body model. The logic level gate threshold voltage (Vgs(th) max 1.5V) allows direct operation from 3V circuits. The part is housed in a compact SC-70-6 (SC-88) surface mount package, which is Pb-Free and RoHS compliant.
Typical applications include load switching, power management in portable devices, and replacement of bipolar digital transistors. The dual configuration provides space savings and matched performance.
| Qty | Low | High |
|---|---|---|
| 10,000+ | $0.13 | $0.13 |
| 20,000+ | $0.12 | $0.12 |
| 30,000+ | $0.11 | $0.11 |
| 50,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
SC-88 (SC-70-6 / SOT-363) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and Pb-Free per the datasheet.
6kV human body model per MIL-STD-883D.
Maximum 1.5V at 250µA drain current.
Maximum 5 Ohm at Vgs=2.7V.