FDG6301N_D87Z Dual N-channel logic level enhancement mode MOSFET. 25V drain-source voltage, 0.22A continuous current, 4 Ohm on-resistance at 4.5V gate drive.
Mfr Part #:

FDG6301N_D87Z

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel logic level enhancement mode MOSFET. 25V drain-source voltage, 0.22A continuous current, 4 Ohm on-resistance at 4.5V gate drive.
✓ Total Stock: 301,000 pcs
$ Price Range: $0.11 - $0.13

FDG6301N_D87Z Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
301,000 pcs
301000 pcs On Request 1 On Request On Request On Request On Request On Request

FDG6301N_D87Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDG6301N_D87Z Description

Short technical summary and product information.

The FDG6301N_D87Z is a dual N-channel logic level enhancement mode MOSFET from onsemi. It is designed for low voltage applications, offering a drain-source voltage of 25V and continuous drain current of 0.22A. The device features a very low on-resistance of 4 Ohm at 4.5V gate drive, making it suitable for battery-powered and portable electronics.

 

This MOSFET incorporates gate-source Zener protection for ESD ruggedness, rated at 6kV human body model. The logic level gate threshold voltage (Vgs(th) max 1.5V) allows direct operation from 3V circuits. The part is housed in a compact SC-70-6 (SC-88) surface mount package, which is Pb-Free and RoHS compliant.

 

Typical applications include load switching, power management in portable devices, and replacement of bipolar digital transistors. The dual configuration provides space savings and matched performance.

FDG6301N_D87Z Quick Information

Product Type: MOSFET Array
Canonical Name: On Semiconductor FDG6301N_D87Z Dual N-Channel MOSFET, 25V, 0.22A, SC-70-6
Subcategory: Dual N-Channel MOSFET Array

FDG6301N_D87Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDG6301N_D87Z Estimated Pricing

Qty Low High
10,000+ $0.13 $0.13
20,000+ $0.12 $0.12
30,000+ $0.11 $0.11
50,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG6301N_D87Z Features

  • Dual N-channel logic level MOSFET.
  • 25V drain-source voltage, 0.22A continuous current.
  • Low on-resistance: 4 Ohm at 4.5V gate drive.
  • ESD protection: 6kV human body model.
  • Compact SC-70-6 surface mount package.

FDG6301N_D87Z Applications

  • Ideal for low voltage load switching in portable devices.
  • Used as a replacement for bipolar digital transistors.
  • Suitable for power management in battery-powered circuits.
  • Can be used in signal routing and analog switches.

FDG6301N_D87Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

25V.

What package is the FDG6301N_D87Z available in?

SC-88 (SC-70-6 / SOT-363) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDG6301N_D87Z RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free per the datasheet.

What is the ESD rating of this MOSFET?

6kV human body model per MIL-STD-883D.

What is the gate threshold voltage?

Maximum 1.5V at 250µA drain current.

What is the on-resistance at 2.7V gate drive?

Maximum 5 Ohm at Vgs=2.7V.

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