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FDG6301N Dual N-channel logic level MOSFET from On Semiconductor. Rated for 25V drain-source voltage and 0.22A continuous current with 4 Ohm on-resistance at 4.5V gate drive.
Mfr Part #:

FDG6301N

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel logic level MOSFET from On Semiconductor. Rated for 25V drain-source voltage and 0.22A continuous current with 4 Ohm on-resistance at 4.5V gate drive.
✓ Total Stock: 109,008 pcs
$ Price Range: $0.68

FDG6301N Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDG6301N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDG6301N Description

Short technical summary and product information.

The FDG6301N is a dual N-channel enhancement mode MOSFET from On Semiconductor, designed for low voltage applications. It features logic level gate drive with a maximum gate threshold voltage of 1.5V, enabling direct operation from 3V circuits. The device offers a drain-source voltage rating of 25V and continuous drain current of 0.22A, with pulsed current capability up to 0.65A. On-resistance is typically 4 Ohm at Vgs=4.5V and 5 Ohm at Vgs=2.7V. The MOSFET includes integrated gate-source Zener diodes for ESD protection up to 6.0 kV (Human Body Model). Input capacitance is 9.5 pF and gate charge is 0.4 nC, supporting efficient switching. Maximum power dissipation is 300 mW, and the operating junction temperature range is -55°C to 150°C. The device is housed in a compact SC-88 (SC-70-6, SOT-363) surface mount package, making it suitable for space-constrained designs. It is RoHS3 compliant and Pb-free.

FDG6301N Quick Information

Product Type: MOSFET Array
Canonical Name: FDG6301N Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

FDG6301N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: REACH Unaffected
Lead Free: Yes

FDG6301N Estimated Pricing

Qty Low High
1+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG6301N Features

  • Dual N-channel logic level MOSFET.
  • 25V drain-source voltage rating.
  • Low on-resistance: 4 Ohm at 4.5V.
  • ESD rated to 6 kV HBM.
  • Compact SC70-6 surface mount package.

FDG6301N Applications

  • Ideal for low voltage load switching.
  • Used in battery management circuits.
  • Suitable for portable electronics.
  • Replaces bipolar digital transistors.

FDG6301N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

25V maximum.

What is the package type?

SC-88 (SC-70-6, SOT-363).

What is the operating temperature range?

-55°C to 150°C.

Is this device RoHS compliant?

Yes, RoHS3 compliant and Pb-free.

What is the continuous drain current?

0.22A.

What is the on-resistance?

4 Ohm maximum at Vgs=4.5V, Id=220mA.

Does it have ESD protection?

Yes, rated to 6.0 kV HBM.

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