| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,985 pcs
|
2985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDG410NZ is an N-Channel MOSFET from ON Semiconductor, designed for low-voltage switching applications. It features a drain-source voltage (Vdss) of 20V and a continuous drain current of 2.2A at ambient temperature.
The device has a low on-resistance of 70mΩ maximum at Vgs=4.5V and Id=2.2A, enabling efficient power handling. Gate threshold voltage is 1V maximum at 250µA. The input capacitance is 535pF at Vds=10V, and the gate charge is 7.2nC at Vgs=4.5V, indicating fast switching capability.
The MOSFET is housed in a compact 6-lead TSSOP/SC-88/SOT-363 surface-mount package, suitable for space-constrained designs. It is rated for operation from -55°C to 150°C junction temperature, with a maximum power dissipation of 420mW at ambient temperature.
The drain-source voltage (Vdss) is 20V.
The FDG410NZ is available in a 6-TSSOP, SC-88, SOT-363 surface-mount package.
The operating temperature range is -55°C to 150°C (junction).
The FDG410NZ is marked as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.
The maximum continuous drain current is 2.2A at ambient temperature.
The maximum gate threshold voltage is 1V at 250µA drain current.
The maximum power dissipation is 420mW at ambient temperature.