FDG332PZ FDG332PZ is a P-Channel enhancement-mode MOSFET in a space-saving SC-88 package. It features a 20V drain-source breakdown voltage and continuous drain current of 2.6A with low on-resistance of 95mΩ.
Mfr Part #:

FDG332PZ

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDG332PZ is a P-Channel enhancement-mode MOSFET in a space-saving SC-88 package. It features a 20V drain-source breakdown voltage and continuous drain current of 2.6A with low on-resistance of 95mΩ.
✓ Total Stock: 109,715 pcs
$ Price Range: $0.14

FDG332PZ Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDG332PZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDG332PZ Description

Short technical summary and product information.

The FDG332PZ is a P-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for load switching and power management applications where low-voltage and low-power operation is required.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current of 2.6A at an ambient temperature of 25°C. The device features a maximum on-resistance of 95mΩ at a gate drive of 4.5V, ensuring efficient operation. The gate threshold voltage is 1.5V maximum, allowing logic-level drive compatibility.

 

The MOSFET is housed in a compact 6-lead SC-88 (SC-70-6) surface-mount package, which is also known as 6-TSSOP or SOT-363. It has a maximum power dissipation of 750mW and an operating junction temperature range of -55°C to +150°C. The device is RoHS3 compliant and REACH unaffected.

FDG332PZ Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDG332PZ P-Channel MOSFET
Subcategory: P-Channel MOSFET

FDG332PZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG332PZ Estimated Pricing

Qty Low High
6,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG332PZ Features

  • Surface mount SC-88 package (SC-70-6).
  • Low on-resistance: 95mΩ at 2.6A, 4.5V.
  • Logic-level gate threshold voltage (1.5V max).
  • Wide operating temperature range -55°C to +150°C.
  • RoHS compliant and REACH unaffected.

FDG332PZ Applications

  • Load switching in portable electronics.
  • Battery-powered circuit power management.
  • DC/DC converter primary side switch.
  • General purpose power management.

FDG332PZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) for the FDG332PZ?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

The continuous drain current is 2.6A at an ambient temperature (Ta) of 25°C.

What is the on-resistance (Rds(on)) of this MOSFET?

The maximum on-resistance is 95mΩ at a drain current of 2.6A and gate-source voltage of 4.5V.

What package does the FDG332PZ come in?

It is available in a 6-TSSOP, SC-88, SOT-363 surface-mount package, with the supplier device package being SC-88 (SC-70-6).

What are the operating temperature limits?

The operating junction temperature range is -55°C to +150°C.

What is the gate threshold voltage (Vgs(th))?

The maximum gate threshold voltage is 1.5V at a drain current of 250µA.

Is the FDG332PZ RoHS compliant?

Yes, the part is listed as RoHS3 Compliant, but this designation is unverified (low confidence).

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