FDG330P The FDG330P is a P-Channel MOSFET from onsemi, rated for 12V drain-source voltage and 2A continuous drain current. It features a low on-resistance of 110mOhm and comes in an SC-88 (SOT-363) surface-mount package.
Mfr Part #:

FDG330P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDG330P is a P-Channel MOSFET from onsemi, rated for 12V drain-source voltage and 2A continuous drain current. It features a low on-resistance of 110mOhm and comes in an SC-88 (SOT-363) surface-mount package.
✓ Total Stock: 1,525 pcs
$ Price Range: $0.54

FDG330P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,525 pcs
1525 pcs On Request 1 On Request On Request On Request On Request On Request

FDG330P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDG330P Description

Short technical summary and product information.

The FDG330P is a P-Channel enhancement-mode MOSFET manufactured by onsemi. It is designed for low-voltage power switching and load management in space-constrained electronic circuits. The device is offered in the compact SC-88 (SOT-363) surface-mount package, which is well suited for high-density PCB designs.

 

Key electrical specifications include a maximum drain-to-source voltage of 12V, a continuous drain current of 2A at ambient temperature, and a maximum drain-to-source on-resistance of 110mOhm with a gate drive of 4.5V. The gate threshold voltage is 1.5V max at 250µA, and the device can support a maximum gate-source voltage of ±8V. The total gate charge at 4.5V is 7nC, and the input capacitance at 6V drain-source voltage is 477pF.

 

Thermally, the MOSFET can dissipate up to 480mW at ambient temperature and operates over a junction temperature range of -55°C to 150°C. These characteristics make it appropriate for a variety of low-power applications, including load switches, power management, and DC-DC converter circuits in portable devices.

FDG330P Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel MOSFET 12V 2A SC-88
Subcategory: P-Channel MOSFET

FDG330P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG330P Estimated Pricing

Qty Low High
554+ $0.54 $0.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG330P Features

  • P-Channel MOSFET with 12V drain-source rating.
  • Handles 2A continuous drain current.
  • 110mOhm on-resistance at 4.5V drive.
  • Compact SC-88 surface-mount package.
  • Operating temperature range -55°C to 150°C.

FDG330P Applications

  • Use for low-voltage load switching circuits.
  • Ideal for power management in portable devices.
  • Suitable for battery-powered electronics.
  • Useful in DC-DC converter output stages.

FDG330P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDG330P?

The maximum drain-to-source voltage (Vdss) is 12V.

What package does the FDG330P come in?

The FDG330P is available in the 6-TSSOP, SC-88, SOT-363 surface-mount package, with a supplier device package of SC-88 (SC-70-6).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDG330P RoHS compliant?

The FDG330P is listed as RoHS3 compliant and REACH unaffected, though this compliance data is unverified and should be confirmed.

What is the maximum continuous drain current?

The maximum continuous drain current is 2A at ambient temperature (Ta).

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance (Rds on) is 110mOhm at Vgs = 4.5V and Id = 2A.

What is the gate charge of the FDG330P?

The maximum gate charge (Qg) is 7nC at Vgs = 4.5V.

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