| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,430 pcs
|
2430 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDG329N is an N-Channel PowerTrench MOSFET designed for DC/DC converter and power management applications. It features a 20V drain-source breakdown voltage and a continuous drain current of 1.5A at 25°C ambient.
Key electrical characteristics include a typical drain-source on-resistance of 70 mΩ at VGS = 4.5V and ID = 1.5A, with a maximum of 90 mΩ. The device has a typical gate charge of 3.3 nC and input capacitance of 324 pF, enabling efficient switching in low-power circuits.
The FET is housed in a surface-mount SC-88 (SC-70-6) package and supports operating junction temperatures from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1,137+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 20V at ID = 250 µA.
The maximum continuous drain current is 1.5A at Ta = 25°C.
The typical on-resistance is 70 mΩ at VGS = 4.5V and ID = 1.5A, with a maximum of 90 mΩ.
The FDG329N is supplied in a surface-mount SC-88 (SC-70-6) package.
The operating junction temperature range is -55°C to 150°C.