FDG328P FDG328P is a P-Channel MOSFET from On Semiconductor. It features 20V drain-source voltage, 1.5A continuous drain current, and low on-resistance of 145 mOhm at 4.5V gate drive.
Mfr Part #:

FDG328P

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDG328P is a P-Channel MOSFET from On Semiconductor. It features 20V drain-source voltage, 1.5A continuous drain current, and low on-resistance of 145 mOhm at 4.5V gate drive.
✓ Total Stock: 5,254 pcs

FDG328P Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
254 pcs
254 pcs On Request 1 On Request On Request 648 On Request On Request

FDG328P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDG328P Description

Short technical summary and product information.

The FDG328P is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor using advanced POWERTRENCH technology. It is designed for power management applications requiring a wide range of gate drive voltages from 2.5V to 12V. Key specifications include a drain-source voltage rating of 20V, continuous drain current of 1.5A, and a maximum on-resistance of 145 mOhm at Vgs = 4.5V. The device features low gate charge of 6 nC and input capacitance of 337 pF, enabling efficient switching. The FDG328P is offered in a compact SC-88 (SC-70-6) surface mount package, which is industry standard for space-constrained designs. Thermal resistance is 260°C/W junction-to-ambient when mounted on a 1 in² pad of 2 oz copper. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for load switch, power management, and DC/DC converter applications.

FDG328P Quick Information

Product Type: P-Channel MOSFET
Canonical Name: FDG328P - P-Channel MOSFET, 20V Vds, 1.5A Id, SC-88
Subcategory: P-Channel MOSFET

FDG328P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG328P Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current rating of 1.5A.
  • Low on-resistance of 145 mOhm at 4.5V.
  • Optimized for 2.5V to 12V gate drive.
  • Compact SC-88 surface mount package.

FDG328P Applications

  • Ideal for load switch applications.
  • Used in power management circuits.
  • Suitable for DC/DC converter designs.
  • Designed for portable electronics.

FDG328P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDG328P?

The FDG328P has a maximum drain-source voltage of 20V.

What package is the FDG328P available in?

The FDG328P is available in 6-TSSOP, SC-88, and SOT-363 packages. The supplier device package is SC-88 (SC-70-6).

What is the operating temperature range of the FDG328P?

The operating junction temperature range is -55°C to 150°C.

Is the FDG328P RoHS compliant?

The FDG328P is indicated as RoHS3 compliant, but this status is unverified and should be confirmed from official sources.

What is the continuous drain current rating of the FDG328P?

The continuous drain current is 1.5A at Ta = 25°C.

What is the typical gate charge of the FDG328P?

The maximum gate charge is 6 nC at Vgs = 4.5V.

What is the on-resistance of the FDG328P?

The maximum on-resistance is 145 mOhm at Id = 1.5A, Vgs = 4.5V.

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