| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
254 pcs
|
254 pcs | On Request | 1 | On Request | On Request | 648 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDG328P is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor using advanced POWERTRENCH technology. It is designed for power management applications requiring a wide range of gate drive voltages from 2.5V to 12V. Key specifications include a drain-source voltage rating of 20V, continuous drain current of 1.5A, and a maximum on-resistance of 145 mOhm at Vgs = 4.5V. The device features low gate charge of 6 nC and input capacitance of 337 pF, enabling efficient switching. The FDG328P is offered in a compact SC-88 (SC-70-6) surface mount package, which is industry standard for space-constrained designs. Thermal resistance is 260°C/W junction-to-ambient when mounted on a 1 in² pad of 2 oz copper. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for load switch, power management, and DC/DC converter applications.
The FDG328P has a maximum drain-source voltage of 20V.
The FDG328P is available in 6-TSSOP, SC-88, and SOT-363 packages. The supplier device package is SC-88 (SC-70-6).
The operating junction temperature range is -55°C to 150°C.
The FDG328P is indicated as RoHS3 compliant, but this status is unverified and should be confirmed from official sources.
The continuous drain current is 1.5A at Ta = 25°C.
The maximum gate charge is 6 nC at Vgs = 4.5V.
The maximum on-resistance is 145 mOhm at Id = 1.5A, Vgs = 4.5V.