FDG315N FDG315N is a 2A, 30V N-Channel Logic Level MOSFET from On Semiconductor. It features low on-resistance (120mΩ at 10V) and low gate charge.
Mfr Part #:

FDG315N

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDG315N is a 2A, 30V N-Channel Logic Level MOSFET from On Semiconductor. It features low on-resistance (120mΩ at 10V) and low gate charge.
✓ Total Stock: 1,699 pcs
$ Price Range: $0.28

FDG315N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,680 pcs
1680 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
19 pcs
19 pcs On Request 1 On Request On Request 1438 On Request On Request

FDG315N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDG315N Description

Short technical summary and product information.

The FDG315N is an N-Channel Logic Level MOSFET manufactured by On Semiconductor (onsemi) using the advanced POWERTRENCH process. This device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for low voltage and battery powered applications.

 

Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 2A (at 25°C), and a maximum on-resistance of 120mΩ at Vgs=10V and 160mΩ at Vgs=4.5V. The MOSFET features low gate charge (typical 2.1nC at 10V) and low input capacitance (220pF at Vds=15V), enabling fast switching.

 

The device is housed in a compact SC-88 (SC-70-6) surface mount package, which is industry standard and space-saving. It supports a junction temperature range of -55°C to 150°C. The FDG315N is Pb-free and RoHS compliant.

 

Typical applications include DC/DC converters, load switches, and power management circuits where low in-line power loss and fast switching are required. The logic level gate drive allows direct interfacing with low voltage control signals.

FDG315N Quick Information

Product Type: N-Channel MOSFET
Series: POWERTRENCH
Canonical Name: FDG315N N-Channel Logic Level MOSFET
Subcategory: Logic Level MOSFET

FDG315N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDG315N Estimated Pricing

Qty Low High
1,680+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG315N Features

  • 2A continuous drain current rating.
  • 30V drain-source voltage rating.
  • Low on-resistance: 120mΩ at 10V.
  • Logic level gate drive (4.5V).
  • RoHS compliant and Pb-free.

FDG315N Applications

  • Used in DC/DC converter circuits.
  • Ideal for load switch applications.
  • Suitable for power management systems.
  • Low voltage battery powered devices.
  • Fast switching in portable electronics.

FDG315N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FDG315N?

30V.

What package does the FDG315N come in?

SC-88 (SC-70-6) surface mount package.

What is the operating temperature range of the FDG315N?

-55°C to 150°C (junction).

Is the FDG315N RoHS compliant?

Yes, it is RoHS compliant and Pb-free.

What is the typical gate charge of the FDG315N?

2.1 nC typical at Vgs=10V.

What is the maximum on-resistance at 4.5V gate drive?

160 mΩ at Id=2A.

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