| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,605 pcs
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2605 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDG314P is a P-Channel enhancement mode MOSFET produced using Fairchild Semiconductor's high cell density DMOS technology, now part of On Semiconductor. It is designed for low gate drive voltage operation, making it suitable for battery-powered applications such as notebook computers and cellular phones.
Key electrical specifications include a maximum drain-source voltage of -25V, a continuous drain current of -0.65A at 25°C, and a pulsed drain current of -1.8A. The typical on-resistance is 0.77 Ohm at Vgs = -4.5V and Id = -0.5A, with a maximum of 1.1 Ohm under the same conditions. The gate threshold voltage is typically -0.72V and maximum -1.5V. The device also features integrated ESD protection with a rating of 6 kV (Human Body Model).
The MOSFET is housed in a compact SC-88 (SC-70-6) surface mount package, which is industry standard. It operates over a junction temperature range of -55°C to 150°C. Typical applications include power management, load switching, and signal switching in low-voltage systems.
| Qty | Low | High |
|---|---|---|
| 1,817+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -25V.
The continuous drain current is -0.65A at 25°C ambient temperature.
The maximum on-resistance is 1.1 Ohm at Vgs = -4.5V and Id = -0.5A. Typical value is 0.77 Ohm.
The gate threshold voltage ranges from -0.65V (minimum) to -1.5V (maximum), with a typical value of -0.72V at Id = -250 µA.
The device is available in an SC-88 (SC-70-6) surface mount package, also known as 6-TSSOP or SOT-363.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.