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FDG313N

FDG313N is an N-Channel MOSFET from On Semiconductor with 25V maximum drain-source voltage and 950mA drain current. It features a low on-resistance of 450mOhm at 4.5V gate drive and is housed in a surface-mount SC-88 package.

✓ Total Stock: 455,460 pcs

FDG313N Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	452,000 pcs On Request	452000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,940 pcs On Request	1940 pcs	On Request	1	On Request	On Request	01+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	1,520 pcs On Request	1520 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDG313N Description

Short technical summary and product information.

The FDG313N is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for low-power switching applications. It offers a maximum drain-source voltage of 25V and a continuous drain current of 950mA at ambient temperature.

Key electrical characteristics include a maximum on-resistance of 450mOhm at 500mA drain current and 4.5V gate drive, with a typical on-resistance of 0.6 Ohm at 2.7V. The gate threshold voltage is 1.5V maximum at 250µA, enabling logic-level drive. Gate charge is only 2.3nC at 4.5V, and input capacitance is 50pF at 10V drain-source voltage, supporting efficient switching.

The device can dissipate up to 750mW at ambient temperature and operates over a junction temperature range of -55°C to 150°C. It is supplied in a surface-mount SC-88 (SC-70-6) package, which is compact and suitable for space-constrained designs.

Typical applications include load switching, DC-DC converter power stages, battery protection, and signal switching in portable electronics and other low-voltage systems.

FDG313N Quick Information

Product Type: Single MOSFET

Canonical Name: FDG313N N-Channel MOSFET

Subcategory: N-Channel MOSFET

FDG313N Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

FDG313N Features

N-Channel MOSFET with 25V drain-source voltage.
950mA continuous drain current rating.
Low on-resistance of 450mOhm at 4.5V.
Logic-level gate drive from 2.7V.
Surface mount SC-88 package.

FDG313N Applications

Load switching in portable electronics.
DC-DC converter power stage.
Battery protection circuits.
Signal switching applications.

FDG313N FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating temperature range of the FDG313N?

-55°C to 150°C (junction).

What package is the FDG313N available in?

Surface mount SC-88 (SC-70-6) package.

Is the FDG313N RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the maximum drain-source voltage?

25V.

What is the maximum drain current?

950mA at ambient temperature.

What is the gate threshold voltage?

Maximum 1.5V at 250µA.

What is the on-resistance?

Maximum 450mOhm at 500mA and 4.5V gate drive.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	950 mA (Ta)
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 10 V
Medical Grade	Yes
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	750 mW (Ta)
Rds On (Max) @ Id, Vgs	450 mOhm @ 500 mA, 4.5 V
Supplier Device Package	SC-88 (SC-70-6)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8 V
Vgs(th) (Max) @ Id	1.5 V @ 250 µA